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Abstract
Ferroelectric PZT films were prepared by metalorganic chemical vapor deposition (MOCVD) and sputtering. Crystalline phase control and film composition control experiments were performed. In MOCVD of PZT films, the crystalline phase and film composition were easily controlled by changing the substrate temperature and the Ar carrier gas flow rates of the precursors. A change in the crystalline phase using different precursors and oxidizing gases was also discussed. In order to control the crystalline phase and obtain perovskite rhombohedral PZT thin films, a two step growth process was proposed. In contrast, in sputtering of PZT films, film composition control was more difficult to perform than when PZT films were prepared by MOCVD. The electrical properties of PZT films with different compositions were also investigated.