Preparation of LiNbO₃ thin films by bias sputtering

Takashi Nishida Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, 606-01, Japan

Tadashi Shiosaki Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, 606-01, Japan

Toshihisa Horiuchi Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, 606-01, Japan

Kazumi Matsusige Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, 606-01, Japan

Abstract

As LiNbO₃ is one of the best materials for optical and SAW devices, the preparation of lithium niobate (LiNbO₃) thin films on many different substrates has been widely investigated. However, the growth of high-quality LiNbO₃ films with desired orientation on the amorphous substrates such as SiO₂ is very difficult.

In this study, sputtered LiNbO₃ films were deposited under the external bias electric field in order to fabricate the oriented films. It was found that c-axis oriented LiNbO₃ thin films could be obtained on SiO₂/Si substrates by this bias sputtering method. Moreover, it was revealed that the films had pyroelectricity from pyroelectric measurement.

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Preparation of LiNbO₃ thin films by bias sputtering

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Preparation of LiNbO₃ thin films by bias sputtering