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Abstract
An improved two-dimensional analysis of non-uniformly doped enhancement-mode MOSFETs is presented. The fringing field effect, a major constraint in miniaturization, is accurately incorporated to develop close-form expressions for the channel electric field, threshold voltage and drain current of short channel MOSFETs. The close agreement with experimental/simulated data validates the model for design and optimization of short-channel MOSFETs for VLSI applications.