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Original Articles

A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs

Pages 381-390 | Published online: 09 Nov 2010

References

  • Akers , L. A. 1986 . Inverse narrow width effect . IEEE Electron Device Letters , 7 : 419
  • Akers , L. A. , Beguwala , M. M. E. and Custode , F. Z. 1981 . A model of a narrow width MOSFET including tapered oxide and doping encroachment . IEEE Transactions on Electron Devices , 28 : 1490
  • Akers , L. A. , Sugino , M. and Ford , J. M. 1987 . Characterisation of the inverse-narrow-width effect . IEEE Transactions on Electron Devices , 34 : 2476
  • Arora , N. 1993 . MOSFET Models for VLSI Circuit Simulation , Vienna : Springer-Verlag .
  • Greeneich , E. W. 1983 . An analytical model for the gate capacitance of small-geometry MOS Structures . IEEE Transactions on Electron Devices , 30 : 1838
  • Haldar , S. , Khanna , M. K. and Gupta , R. S. 1994 . Narrow gate effect on depletion mode insulated gate field effect transistor . Solid State Electronics , 37 : 1717
  • Hseuh , K. L. , Sanchez , J. J. , Demassa , T. A. and Akers , L. A. 1988 . Inverse-narrow-width effects and small geometry MOSFET threshold voltage model . IEEE Transactions on Electron Devices , 35 : 325
  • Ji , C. R. and Sah , C. T. 1983 . Two dimensional numerical analysis of the narrow gate effect in MOSFET . IEEE Transactions on Electron Devices , 30 : 635
  • Khanna , M. K. , Haldar , S. , Maneesha , S. R. and Gupta , R. S. 1993 . Substrate bias dependent threshold voltage model of short channel MOSFETs . Solid State Electronics , 36 : 661
  • Oh , S. H. , Sanchez , J. J. and Demassa , T. A. 1996 . Small geometry MOS threshold voltage variations from solutions of the three-dimensional Poisson’ s equation . Solid State Electronics , 39 : 109
  • Petersen , W. P. , Fichtner , W. and Grosse , E. H. 1983 . Vectorised Monte Carlo calculation for the transport of ions in amorphous targets . IEEE Transactions on Electron Devices , 30 : 1011
  • Sodini , C. G. , Ko , P. K. and Moll , J. L. 1984 . The effect of high effectson MOS device and circuit performance . IEEE Transactions on electron devices , 31 : 1386
  • Tang , Y. and Kim , D. M. 1991 . Modelling of on-state MOSFET operation and derivation of maximum channel field . IEEE Transactions on electron devices , 38 : 2472
  • Taylor , G. W. 1979 . The effects of two-dimensional charge sharing on the above-threshold characteristics of short-channel IGFETs . Solid State Electronics , 22 : 701
  • Wu , C.-Y. and Daih , Y.-W. 1985 . An accurate mobility model for the I-V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation . Solid State Electronics , 28 : 1271
  • Yamaguchi , T. and Morimoto , S. 1983 . Analytical model and characterisation of small geometry MOSFETs . IEEE Transactions on Electron Devices , 30 : 559
  • Yau , L. D. 1974 . A simple theory to predict the threshold voltage of short-channel IGFETs . Solid State Electronics , 17 : 1059

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