Fabrication and the Effect of Doping Concentration on Breakdown Voltage of the Large Area Phosphorus Diffused Silicon Diodes

Abstract

The paper describes the predeposit derive in process of making large area phosphorus diffused silicon diodes using POCI₃ as impurity source. Diodes of low resistivity silicon wafers were fabricated with different predeposit time keeping other diffusion parameters constant. Doping concentrations in the wafers corresponding to the different predeposit time are calculated using Gaussian impurity distribution. Observations of the effect of doping concentration on breakdown voltage of the devices are reported.