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IETE Journal of Research Volume 20, 1974 - Issue 1-2

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Original Articles

Fabrication and the Effect of Doping Concentration on Breakdown Voltage of the Large Area Phosphorus Diffused Silicon Diodes

Santosh Kumar 29/56 West Patel Nagar, New Delhi.

Pages 29-30 | Received 07 Mar 1973, Published online: 21 Aug 2015

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https://doi.org/10.1080/03772063.1974.11487318

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REFERENCES

Goulding, F. S., “Nuclear Instruments and Methods,” 43 (1966).
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Deshpande, R. Y., “Solid State Electronics”, 8 (1965), 313.
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Parekh, P. C., “Diffusion of phosphorus and boron in silicon” Univ. Deloware U.S.A. Thesis, 1969.
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Sudha Mahadevan, “Indian J. Pure applied physics” 6 (1968).
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