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Abstract
A study of the lumped equivalent circuit of a symmetrical DAR (Double Avalanche Region) Impatt diode has been made. It has been found that the symmetrical DAR Impatt may be represented by an LC tuned circuit in the microwave frequency range (Som et al. 1974). This paper estimates the frequency-independent values of L and C which are found to depend on the biasing current density. The value of L is nearly 100 times larger than that for a corresponding SDR Impatt (Gilden and Hines' result) while the value of C remains unchanged. The increase in L is attributed to the coupling between the two avalanche ones through the drift zone of the device.
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D.N. Datta
Datta, D N: Born in November, 1946 in Purulia, West Bengal. Received B.Sc. (Hons.) degree from Calcutta University in 1966 and M.Sc. degree in Physics from the same University in 1968 with specialization in Nuclear Physics. He joined Ramananda College, Bishnupur, West Bengal as a Lecturer of Physics in 1969. For the last four years, he was associated with the Centre of Advanced Study in Radiophysics and Electronics, Calcutta as a Teacher Fellow. He has published a number of research papers on a newly proposed Avalanche Transit Time Device, namely the DAR Impatt diode. Currently, he is engaged in further studies on this device.