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Note

Lumped Circuit Representation of a Symmetrical Double Avalanche Region Impatt Diode

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Pages 313-315 | Received 25 Nov 1980, Published online: 11 Jul 2015

REFERENCES

  • Som (B), Pal (B B) & Roy (S K). A Small Signal Analysis of an Impatt Device Having Two Avalanche Layers Interspaced by a Drift Layer. Solid-State Electronics. 17, 10; 1974; 1029–1038. 1938.
  • Datta (D N) & Pal (B B). High-Frequency Noise Properties of a Double Avalanche Region (DAR) Impatt Diode. Solid State Electronics. 23, 4; 1980; 377–382
  • Gilden (M) & Hines (M F). Electronic Tuning Effects in Read Microwave Avalanche Diode. IEEE Trans. ED-13, 1; 1966; 169–175.
  • Datta (D N) & Pal (B B). Generalized Small-Signal Analysis of Double Avalanche Region (DAR) Impatt Diode. Solid-State Electronics (Communicated).

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