Modelling and Characterization of Ohmic Contact Resistances in Submicron Gate-Length Modulation-Doped Field-Effect Transistor

Abstract

A multiple layer transmission line (MTL) model has been developed for the planar source and drain ohmic contacts as encountered in modulation-doped FET's. Detailed current and voltage distributions under the MTL system have been obtained by numerical solutions of the coupled differential equations, and the effects of the resistivity parameters on the series resistance have been investigated by the “spice” network simulation. Experimental results obtained from submicron gate-length MODFET's based on the ‘gate-probe’ method, and a new small-signal two-trans-conductance measurement scheme are also presented.

Indexing terms:

• Multiple layer transmission line (MTL)
• Modulated-doped field-effect transistors (MODFET)