Studies on Grain Boundary in n-Gallium Antimonide Grown by Vertical Bridgman Method

Abstract

Large grain polycrystalline n-GaSb (Te doped) was grown by vertical Bridgman method. The electrical properties of the grain boundary was studied through I-V, C-V and zero bias conductance measurements. The grain boundary barrier height was determined from zero bias capacitance and zero bias conductance versus temperature plot. The barrier height was found to decrease after hydrogen annealing and also under illumination. The electron probe microanalysis (EPMA) provided possible interpretation for such decrease in barrier height.