REFERENCES
- W E Taylor, N H Odell & H Y Fan, Grain boundary in Ge Phys Rev, vol 88, pp 867–875, 1952.
- G E Pike & C H Seager, The de voltage dependence of semiconductor grain boundary resistance, J Appl Phys, vol 50, pp 3414–3422, 1979.
- W Siegel, G K uhnel & H A Schneider, Symmetrical and asymmetrical potential barriers of grain boundaries in p-type GaP, Phys Stat Sol A, vol 97, p 609, 1986.
- C H Seager & G E Pike, Grain boundary states and varistor bciiaviour in silicon bicrystals, Appl Phys Lett, vol 35, pp 709–711. 1979.
- TL Chu, S S Chu, K Y Duh & H Yoo, Grain boundary in silicon. Proc National Workshop on Low Cost Polycrystalline Solar Cells Dallas, TX, p 408, May 1976.
- J C Anderson, Thin film microtransducers for elastohydrodynamic lubrication studies, Thin Solid Film, vol 67, p 127, 1980.
- H J Leamy, G E Pike & C H Seager (Ed), Grain Boundaries in Semiconductor, North Holland, Amsterdam, 1982, p 103.
- G E Pike, P L Gourley & S R Kurtz, Impact ionization near GaAs grain boundaries, Appl Phys Lett, vol 43, pp 939–951, 1983.
- C H Seager & G E Pike, Electron tunnelling through GaAs grain boundaries, Appl Phys Lett, vol 40, pp 471–474, 1982.