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Abstract
Thermal oxidation of n-GaSb was carried out with and without water vapour and the oxide characteristics were studied in detail. Oxidation rate was found to be much higher in presence of water vapour. XPS analysis confirmed formation of both Ga2O3 and Sb2O3. The oxide showed high de resistance and large breakdown field strength. C-V characteristics of AI/oxide/'GaSb MOS structure and tho interface state density as calculated by Termen's method are also presented in this communication.