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Abstract
Polysilicon Emitter Transistors (PETs) which are now being widely used in high speed bipolar circuits because of their extremely low emitter transit time τE, have broken-up interfacial oxide layer due to annealing process which they undergo. The effect of oxide layer break-up at the mono-poly interface of the emitter region of a PET on τE is studied here. The effect of doping profile, peak doping concentration, thickness of interfacial oxide layer on τE is studied also. Exponential doping distribution alongwith concentration dependent bandgap narrowing effect and concentration dependent diffusion constant in the monosilicon emitter region are considered.
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Sukla Basu
Sukla Basu obtained her BSc (Hons) degree in Physics, BTech, MTech degrees in Radiophysics and Electronics from Calcutta University in 1986, 1989 and 1991 respectively. From 1991 to 1996 she was engaged in full time research work in projects sponsored by Government of India at the Institute of Radiophysics & Electronics. In 1996 she joined the Electronics and Communication Engineering Department of Kalyani Govt Engineering College, Kalyani, West Bengal and at present she is an Assistant Professor there. Her current area of research interest is advanced bipolar semiconductor device modelling.