REFERENCES
- K Suzuki, Emitter and bass transit time of polycrystalline emitter contact bipolar transistors, IEEE Transaction on Electron Devices, vol 38, pp 2512–2518, 1991.
- T C Lu & J B Kuo, A closed form analytical forward transit time model considering specific models for bandgap narrowing effects and concentration dependent diffusion co-efficients for BJT devices operating at 77k, IEEE Transations on Electron Devices, vol 40, pp 766–771, 1993.
- L M Castaner, S Sureda, D Bardes & R Alcubilla, A compact charge ratio expression for the emitter delay of polysilicon emitter bipolar transistors, IEEE Transations on Electron Devices, vol 41, pp 454–455, 1994.
- N Rinaldi, On the modelling of polysilicon emitter bipolar transistors, IEEE Transations on Electron Devices, vol 44, pp 395–403, 1997.
- S Basu, R N Mitra & A N Daw, On the transit time of polysilicon emitter transsistors, Solid State Electronics, vol 43, pp 189–197, 1999.
- R J V Overtraeten, H J Demon & R P Mertens, Transport equation in heavy doped silicon. IEEE Transations on Electron Devices, vol 20, pp 290–298, 1973.
- S Basu, DK Pal & A N Daw, On the modelling of polysilicon emitter transistors, Internatioanl Journal of Electronics, vol 77, pp 441–450, 1994.
- Z Yu, B Ricco & R W Dutton, A comprehensive analytical and numerical model of polysilicon emitter contacts in bipolar transistors. IEEE Transations on Electron Devices. vol 31, pp 773–784, 1984.
- T H Ning & R D Issac, Effect of emitter contact on gain of silicon bipolar devices, IEEE Transations on Electron Devices, vol 27, pp 2051–2056, 1980.