Polarity determination in 〈100〉-orientated GaSb by high-resolution transmission electron microscopy at 300 kV

A. C. Wright Solid State Chemistry Group, Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester, M60 1QD, England

T. L. Ng Solid State Chemistry Group, Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester, M60 1QD, England

J. O. Williams Solid State Chemistry Group, Department of Chemistry, University of Manchester Institute of Science and Technology, P.O. Box 88, Manchester, M60 1QD, England

Abstract

The polarity or orientation of 〈110〉 projected single crystals of tetrahedral compound semiconductors has been determined by high-resolution electron microscopy (HREM) at 300 kV. The method has been applied to GaSb and computer simulations show that the image contrast is the reverse of that expected intuitively. Similar results are predicted for GaAs.

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Polarity determination in 〈100〉-orientated GaSb by high-resolution transmission electron microscopy at 300 kV

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Polarity determination in 〈100〉-orientated GaSb by high-resolution transmission electron microscopy at 300 kV

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