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Abstract
In this work, metal / ferroelectric / insulator / semiconductor (MFIS) and metal / ferroelectric / metal / insulator / semiconductor (MFMIS) structures using Pb(Zr, Ti)O3 (PZT) films were fabricated and characterized for nonvolatile NDRO memory device. 300nm-thick PZT films were deposited by reactive RF magnetron sputtering method on ZrTiO4(ZT)/Si and Pt/ZT/Si substrates. C-V hysteresis were measured in both MFIS and MFMIS structures. By using a small-size MFM capacitor on a large-size MIS structure, it was found that the memory window of MFMIS structure was larger than that of the MFIS structure. There is a critical area ratio (SMIS/SMFM) in MFMIS structure. When an area ratio in MFMIS structure is below 12, the memory window increased with increasing area ratio. We could obtain that the memory window of MFMIS structure with a SMIS/SMFM of 11.8 was 2.1 V and 3.2 V with an applied voltage at 3 V and 5 V.