Effects of nitridation treatments for SBT/Ta₂O₅ stack gate capacitors

Hyungseob Min Department of Materials Engineering, Kookmin University, 861-1 JeongNeung-Dong, SungBuk-Gu, Seoul, 136-702, Korea

Changbae Jun Department of Materials Engineering, Kookmin University, 861-1 JeongNeung-Dong, SungBuk-Gu, Seoul, 136-702, Korea

Sung-Il Shin ULVAC/SINKU-RIKO Inc, 1–9–19, Hakusan, Midori-Ku, Yokohama, Japan

T. Inoue ULVAC/SINKU-RIKO Inc, 1–9–19, Hakusan, Midori-Ku, Yokohama, Japan

Jinho Ahn Department of Materials Engineering, Hanyang University, 17 Hang dang-Dong, Seong dong-Gu, Seoul, 133-702, Korea

Jiyoung Kim Department of Materials Engineering, Hanyang University, 17 Hang dang-Dong, Seong dong-Gu, Seoul, 133-702, Korea

Abstract

In this study, effects of ICP nitride treatments on characteristics of ferroelectric gate stack capacitor were investigated for FET type ferroelectric memory applications. Pt/SBT(200nm)/Ta₂O₅(20nm)/ Nitride/Si (MeFINS) structure capacitors show wide ΔV (memory window) of 1.06V under ±3V operation, while Pt/SBT(200nm)/ Ta2O₅(20nm)/Si (MeFIS) capacitors without nitride treatments exhibit memory window of 0.60V. At the same time, an accumulation capacitance of the MeFINS structure device is higher than that of the MeFIS structure capacitor. This result implies that the ICP nitride treatment successfully suppresses a formation of low dielectric constant interfacial SiO_x layer and alleviates a series capacitance problem.

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Effects of nitridation treatments for SBT/Ta₂O₅ stack gate capacitors