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Integrated Ferroelectrics
An International Journal
Volume 40, 2001 - Issue 1-5
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Original Articles

Effects of nitridation treatments for SBT/Ta2O5 stack gate capacitors

Hyungseob Min Department of Materials Engineering, Kookmin University, 861-1 JeongNeung-Dong, SungBuk-Gu, Seoul, 136-702, Korea
,
Changbae Jun Department of Materials Engineering, Kookmin University, 861-1 JeongNeung-Dong, SungBuk-Gu, Seoul, 136-702, Korea
,
Sung-Il Shin ULVAC/SINKU-RIKO Inc, 1–9–19, Hakusan, Midori-Ku, Yokohama, Japan
,
T. Inoue ULVAC/SINKU-RIKO Inc, 1–9–19, Hakusan, Midori-Ku, Yokohama, Japan
,
Jinho Ahn Department of Materials Engineering, Hanyang University, 17 Hang dang-Dong, Seong dong-Gu, Seoul, 133-702, Korea
&
Jiyoung Kim Department of Materials Engineering, Hanyang University, 17 Hang dang-Dong, Seong dong-Gu, Seoul, 133-702, Korea
Pages 211-218 | Received 14 Mar 2001, Published online: 19 Aug 2006

References

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  • Kim , T. , Kim , H. , Koo , J. M. , Min , H. and Kim , J. 2000 . Integrated Ferroelectric , 30 : 121 – 128 .
  • Kim , H. , Bang , I. and Kim , J. 1999 . Journal of the Korea Physical Society , 35 : S123 – S126 .
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  • Okimura , K. , Shibata , A. , Maeda , N. , Tachibana , K. , Noguchi , Y. and Tsuchida , K. 1995 . Jpn. J. Appl. Phys. , 34 : 4950 – 4955 .
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