Effects of ILD & IMD characteristics on ferroelectric properties of fram devices

Abstract

We have deposited SiO₂ using plasma-enhanced TEOS-based (PE-TEOS) CVD method and USG and PSG using atmosphere-pressure CVD method on Pb(Zr, Ti)O₃(PZT) capacitors. The ferroelectric and dielectric properties of the SiO₂ covered PZT capacitors were characterized. SIMS (secondary ion mass spectroscopy) was utilized to obtain hydrogen concentration in the deposited ILD and IMD materials. The concentration of hydrogen in the PE-TEOS-derived SiO₂ was lower than that in the PSG and the USG. Internal stress was low tensile at room temperature and the behavior of thermal stress hysteresis was nearly similar for all SiO₂ materials. Remnant polarization (Pr) of the PE-TEOS covered PZT capacitors was severely degraded as compared to that of as-deposited capacitors. From these results, we have concluded that the degradation of ferroelectric characteristics of PZT capacitors associated with the ILD and IMD processes was closely related to the plasma-induced damage.

Key Words:

• ILD
• IMD
• FRAM
• PZT
• Plasma damage
• Hydrogen damage