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Integrated Ferroelectrics
An International Journal
Volume 39, 2001 - Issue 1-4
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Section I: Materials and processing for ferams

Effects of ILD & IMD characteristics on ferroelectric properties of fram devices

Y. T. Lee Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
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K. M. Lee Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
H. G. An Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
S. H. Joo Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
S. D. Nam Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
S. W. Lee Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
M. S. Lee Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
K. S. Park Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
S. O. Park Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
,
H. K. Kang Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
&
J. T. Moon Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., San #24, Nongseori, Yongin City, Korea
 show all
Pages 3-11 | Received 14 Mar 2001, Published online: 03 Sep 2006

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