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Abstract
Pt/BLT/Pt/IrOx/Ir capacitor was successfully integrated on a conventional TiN/TiSi2/poly-Si plug for high density ferroelectric random access memory (FeRAM). Random oriented Bi3.35La0.85Ti3O12 thin (70 nm) film was prepared by optimization of metalorganic decomposition (MOD) and rapid thermal annealing (RTA) processes. After the integration to metal-1 step using a total thermal budget at 650°C for 2 h in O2 for ferroelectric crystallization and recovery, the poly-plug preserved a small contact resistance of 1.5±0.1 kΩ/plug (0.30 μm in diameter). The stacked BLT capacitor showed good electrical properties such as a high switching polarization (P*-P○) of 15±2 μC/cm2 without degradation up to a small capacitor size of 0.7 × 0.7 μm2, a small coercive voltage (2Vc) of 1.3 V, a small leakage current in order of 10−6 A/cm2 and a small polarization loss of 2 μC/cm2 after 1x1011 fatigue cycles.