Abstract
The influence of synthesis temperature and target composition on electrophysical properties of ion-plasma deposited BaSrTiO3 films is investigated. The film growth parameters, which provide the sufficient combination of tunability and loss factor of planar capacitor for microwave application, are determined. That corresponds to the following parameters of the thin film BaSrTiO3 capacitor: tunability n = 2.2, tanδ (0 V/μm) = 0.01, and tanδ (50 V/μm) = 0.003 at room temperature and 1 GHz. Results of microwave measurements of BaSrTiO3 varactors up to 30 GHz are presented as well.
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