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Integrated Ferroelectrics
An International Journal
Volume 36, 2001 - Issue 1-4
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Original Articles

Metal organic chemical vapor deposition of ru electrode for (ba,sr)tio3 capacitors

Younsoo Kim Advanced Process-Capacitor, Memory R & D Division, Hyundai Electronics Industries Co. Ltd., San 136–1, Amiri, Bubal-eup, Ichon-si, Kyoungki-do, 467-701, Korea
,
Seung Chul Ha Advanced Process-Capacitor, Memory R & D Division, Hyundai Electronics Industries Co. Ltd., San 136–1, Amiri, Bubal-eup, Ichon-si, Kyoungki-do, 467-701, Korea
,
Kyung Cheol Jeong Advanced Process-Capacitor, Memory R & D Division, Hyundai Electronics Industries Co. Ltd., San 136–1, Amiri, Bubal-eup, Ichon-si, Kyoungki-do, 467-701, Korea
,
Kwon Hong Advanced Process-Capacitor, Memory R & D Division, Hyundai Electronics Industries Co. Ltd., San 136–1, Amiri, Bubal-eup, Ichon-si, Kyoungki-do, 467-701, Korea
,
Jae Sung Roh Advanced Process-Capacitor, Memory R & D Division, Hyundai Electronics Industries Co. Ltd., San 136–1, Amiri, Bubal-eup, Ichon-si, Kyoungki-do, 467-701, Korea
&
Hee Koo Yoon Advanced Process-Capacitor, Memory R & D Division, Hyundai Electronics Industries Co. Ltd., San 136–1, Amiri, Bubal-eup, Ichon-si, Kyoungki-do, 467-701, Korea
Pages 285-294 | Received 14 Mar 2001, Published online: 19 Aug 2006
 
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Abstract

Ru films were deposited on TiN and SiO2 layers by metal organic chemical vapor deposition (MOCVD) at various deposition temperatures. We have used Ru(C8H13O2)3 as a Ru source and O2 as a reaction gas. The deposition of Ru films was controlled by surface-reaction kinetics with activation energy of 0.83eV below 300°C. The thickness and resistivity of Ru films decreased as increase of crystallinity after rapid thermal anneal (RTA). The dielectric constant and leakage current density of BST film deposited on MOCVD Ru showed 190 and 10−6 A/cm2 at ± 1V, respectively.

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