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Integrated Ferroelectrics
An International Journal
Volume 38, 2001 - Issue 1-4
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Section H: High K materials and processes for frams and gate electrics

Study of tasin diffusion barrier

F. Letendu LCFIO, bat 503, Université Paris Sud, 91405, Orsay cedex, France; LPGP, bat 210, Université, Paris sud, 91405, Orsay, France
,
M. C. Hugon LCFIO, bat 503, Université Paris Sud, 91405, Orsay cedex, France; LPGP, bat 210, Université, Paris sud, 91405, Orsay, France
,
B. Agius LCFIO, bat 503, Université Paris Sud, 91405, Orsay cedex, France; LPGP, bat 210, Université, Paris sud, 91405, Orsay, France
,
P. Aubert LMN, Universite d Evry 91
,
S. Coindeau LMN, Universite d Evry 91
&
A. I. Kingon Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
Pages 221-228 | Received 14 Mar 2001, Published online: 19 Aug 2006
 
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Abstract

Due to its resistance to oxidation, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced high-density memory devices. In this study we report on the properties and the resistance to oxidation of TaSiN thin films deposited by reactive magnetron sputtering and processed by rapid thermal annealing (RTA) in 18O2 at 650°C. In order to determine the composition, RBS (Rutherford Backscattering Spectroscopy) and NRA (Nuclear Reaction Analysis) techniques have been used. 18O depth profile concentrations were measured after RTA using the narrow (fwhm=100eV) resonance at 151 keV of the nuclear reaction 18O(p,α)15N.

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