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Abstract
The effect of annealing conditions for rapid thermal process on the electrical properties of BST thin films was investigated. RTN annealing was very effective for crystallization, however leakage current property was severely degraded due to the loss of oxygen. RTO annealing after first RTN was very effective to recover the leakage current property, which was severely degraded during prior RTN. BST thin film treated by RTN (700°C) followed by RTO(420°C) showed the very low leakage current density of about 2x 10−8A/cm2 at IV without significant change in dielectric property. Moreover, the underlying TiN barrier was not oxidized at all by those annealing processes.