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Abstract
This study investigates the characteristics of BST films deposited by rf magnetron co-sputtering of BaTiO3 and SrTiO3 targets. BST films were prepared on four types of substrates at deposition temperatures ranging from 250°C to 450°C. The four substrates included Pt/Ti/SiO2/Si, Pt/Ta/SiO2/Si, Mo/SiO2/Si, and W/SiO2/Si. The dielectric constant and the leakage current density of BST films deposited on Pt/Ti/SiO2/Si substrates were higher than other substrates in the absence of oxygen. Introducing oxygen reduced the leakage current density as a consequence of the few oxygen vacancy and small surface roughness. The dielectric constant of 348 and leakage current density of 1.2x10−7 A/cm2 at IV were obtained in the 160nm-thick BST film deposited on Pt/Ti/SiO2/Si substrates at a deposition temperature of 450°C with a O2:Ar=2:40 gas ratio. The co-sputtering method can obtain high quality BST films at a deposition temperature of 450°C.