Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O₃ Capacitors with SrRuO₃ Electrodes on Si Wafers

K. Maki Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742; Mitsubishi Materials Corporation, Technopark, Sanda, Hyogo 669-1339, Japan

B. T. Liu Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742

Y. So Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742

H. Vu Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742

R. Ramesh Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742

J. Finder Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona 85284

Z. Yu Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona 85284

R. Droopad Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona 85284

K. Eisenbeiser Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona 85284

show all

Abstract

Epitaxial and random-oriented Pb(Zr,Ti)O₃ (PZT) films were fabricated at 450–550°C on SrRuO₃ (SRO)/SrTiO₃/Si and SRO/amorphous Ti-Al layer-Si substrates, respectively, using a modified sol-gel process. For comparison, polycrystalline PZT films were also prepared on Pt-Si substrates using the same method. Thermogravimetric and differential thermal analysis (TG-DTA) of the modified sol-gel solution indicated that the solution began crystallization below 400°C. Both SRO/epitaxial PZT/SRO and SRO/random-oriented PZT/SRO capacitors processed at the same temperature had similar polarization values, and all the SRO/PZT/SRO capacitors processed at 450–550°C exhibited the favorable electrical characteristics including high polarization, high resistivity, small pulse width dependence, and good fatigue endurance. While the Pt/PZT/Pt capacitors processed at 450°C showed considerably low polarization compared to the SRO/PZT/SRO capacitors processed at the same temperature. High-quality SRO/PZT/SRO capacitors processed at low temperature have a bright prospect of fabrication of potential Si devices integrated PZT capacitors without thermal degradation.

Keywords:

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O₃ Capacitors with SrRuO₃ Electrodes on Si Wafers

Information for

Open access

Opportunities

Help and information

Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O3 Capacitors with SrRuO3 Electrodes on Si Wafers

Abstract

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date

Your download is now in progress and you may close this window

Login or register to access this feature

Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr,Ti)O₃ Capacitors with SrRuO₃ Electrodes on Si Wafers