MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr₂(Ta_1−x,Nb_x)₂O₇ Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment

ICHIROU TAKAHASHI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

HIROYUKI SAKURAI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

TATSUFUMI ISOGAI Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

KIYOSHI FUNAIWA New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

MASAKI HIRAYAMA New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

AKINOBU TERAMOTO New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

SHIGETOSHI SUGAWA Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

TADAHIRO OHMI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan

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Abstract

A low dielectric constant ferroelectric Sr₂(Ta_{1 −x},Nb_x)₂O₇ film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 10¹² cm⁻³) low electron temperature (< 1 eV) Kr/O₂ plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO₂ and Si₃N₄ directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.

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MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr₂(Ta_1−x,Nb_x)₂O₇ Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment

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MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment

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MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr₂(Ta_1−x,Nb_x)₂O₇ Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment