Characteristics of Pb(Zr, Ti)O₃ Thin Films Deposited on Pt(Si) at Low Substrate Temperature by Using Ba(Mg_1/3Ta_2/3)O₃ as Buffer Layer

Abstract

Growth behavior of Ba(Mg_1/3Ta_2/3)O₃/Pb(Zr, Ti)O₃/Ba(Mg_1/3Ta_2/3)O₃, BMT/PZT/ BMT, heterostructure on Pt-coated silicon substrate (Pt(Si)) by using in-situ pulsed laser deposition process was systematically examined. The crystallographic orientation and microstructure of heterostructure were observed to vary with deposition parameters markedly. The BMT seeding layer enhanced the growth of PZT films, which started to crystallize at a substrate temperature as low as 350°C. The ferroelectric properties of BMT/PZT/BMT/Pt(Si) films can be optimized when the films were synthesized at 400°C substrate temperature with 0.3 mbar ambient oxygen pressure during deposition of BMT seeding layer (P_r = 29.7 μ C/cm² & E_C = 82.5 kV/cm). Fatigue of the heterostructure showed no degradation and the hysteresis loops showed essentially no change even after 10¹¹ fatigue cycles.

Keywords:

• Ba(Mg_1/3Ta_2/3)O₃
• Pb(Zr, Ti)O₃
• pulsed laser deposition
• seeding

ACKNOWLEDGEMENT

The authors would like to thank the financial support from National Science Council of R. O. C. through the project NSC 92-2216-E.32-006.