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ABSTRACT
Nb-doped Pb(Zr20,Ti80)O3 (PZT) films were grown on both sides (side I and II) of Pt/TiOx/SiO2/Si(100)/SiO2/TiOx/Pt wafers by chemical solution deposition. The structures of these films were characterized by X-ray diffraction and scanning electron microscopy. The effective transverse piezoelectric coefficients of the poled films were in the range of 2.5∼ 6.4 C/m2. {100}-textured films show the highest value of e 31,f. A cantilever was actuated from side I (or II) and sensed from side II (or I). A linear relationship between charge and driving voltage was observed at a quasi-static frequency of 10 Hz. The resonant frequency of the cantilever was found to be 260 Hz. These results clearly indicate that double-sided PZT films are suitable for actuation and sensing of a device.
ACKNOWLEDGMENTS
The authors thank the Federal Aviation Administration (FAA) for funding the project (contract No. 99-G-015). We also thank Central Analytical Facility (CAF) and Center for Materials for Information Technology (MINT) at The University of Alabama for providing structural characterization facilities.