CRYSTALLIZATION BEHAVIOR OF HfO₂ FILMS FOR (Y,Yb)MnO₃/HfO₂/Si STRUCTURES

ABSTRACT

The effects of the hydrolysis of HfO₂ precursor solution on the microstructure evolution at low temperature were investigated. The microstructures of HfO₂ films prepared using non-hydrolyzed precursor solution significantly changed around at 300°C and the large surface roughness was led by microstructure change. The partially hydrolysis of precursor solution was effective for restrain of increase of surface roughness. The refractive index of the HfO₂ films prepared using partially hydrolyzed solution were higher than that of the films prepared using non-hydrolyzed solution. The partially hydrolysis of the HfO₂ solution was found to be effective for formation of uniform and dense structure.

Keywords:

• FET-type nonvolatile memory
• MFIS structure
• (Y,Yb)MnO₃
• HfO₂
• Alkoxy-derived precursor
• Leakage current density
• C-V characteristics