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Integrated Ferroelectrics
An International Journal
Volume 16, 1997 - Issue 1-4
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Device intergration issues and testing

Characterization of self-patterned SrBi2Ta2O9 thin films from photo-sensitive solutions

H. Uchida Central Research Institute, Mitsubishi Mateials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama, 330, Japan
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N. Soyama Central Research Institute, Mitsubishi Mateials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama, 330, Japan
,
K. Kageyama Central Research Institute, Mitsubishi Mateials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama, 330, Japan
,
K. Ogi Central Research Institute, Mitsubishi Mateials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama, 330, Japan
,
M. C. Scott Symetrix Corporation, 5055 Mark Dabling Blvd., Suite 100, Colorado Springs, CO, 80918, USA
,
J. D. Cuchiaro Symetrix Corporation, 5055 Mark Dabling Blvd., Suite 100, Colorado Springs, CO, 80918, USA
,
G. F. Derbenwick Symetrix Corporation, 5055 Mark Dabling Blvd., Suite 100, Colorado Springs, CO, 80918, USA
,
L. D. Mcmillan Symetrix Corporation, 5055 Mark Dabling Blvd., Suite 100, Colorado Springs, CO, 80918, USA
&
C. A. Paz De Araujo Symetrix Corporation, 5055 Mark Dabling Blvd., Suite 100, Colorado Springs, CO, 80918, USA
 show all
Pages 41-52 | Received 18 Mar 1996, Published online: 19 Aug 2006
 
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Abstract

Self-patterned SrBi2Ta2O9 thin films were successfully fabricated from photo-sensitive solutions by means of UV irradiation through photo masks. After conventional baking and wet etching the films were annealed. The photo-sensitive SrBi2Ta2O9 solutions give high resolution negative-pattern of the mask image down to 1 μm line width by deep UV irradiation at 900 mJ/cm2. The capacitor characteristics of the 210 nm thick films fabricated on the Pt/Ti/SiO2/Si substrates by this process showed 2Pr values of 17 μC/cm2, 2Ec of 89 kV/cm, and leakage current densities of 5×10−9 A/cm2 at 5 V. The films showed no fatigue after 1×1011 switching cycles.

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Related Research Data

Photo-sensitive sol–gel solutions for the low-temperature UV-assisted processing of PbTiO3 based ferroelectric thin films
Source: Royal Society of Chemistry (RSC)
The Physics of Ferroelectric Memories
Source: AIP Publishing

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