![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
Abstract
Pb(Zr, Ti)O3 [PZT] capacitors were prepared by CSD on sputtered electrodes of SrRuO3(SRO)/Pt on SiO2/Si wafers. The SRO/Pt bottom electrodes were deposited using two different conditions: (1) at 600°C in-situ (abbreviated HT), and (2) at low temperature followed by a post-deposition anneal at 600°C (abbreviated LTA). The PZT orientation and switching pulse polarization, i.e. HT-SRO (43 μC cm-2) and LTA-SRO (32 μC cm-2) were strongly dependent on the bottom electrodes. Yet neither capacitor showed polarization loss resulting from switching 108 times with ± 5 V pulses. These results indicate that the PZT ferroelectric properties are greatly influenced by the SRO bottom electrode processing conditions.