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Abstract
In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)–voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm−2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.
Acknowledgements
H.E.U. acknowledges supports from the Distinguished Young Scientists award of the Turkish Academy of Sciences (TUBA). Middle East Technical University (METU) Central Laboratory facilities are also greatly acknowledged.
Funding
G.A. and F.A.A. would like to give thanks to Research Projects Unit of Nigde University (The Project Code: FEB 2014/25-BAGEP and The Project Code: FEB 2014/26-BAGEP) and The Scientific & Technical Research Council of Turkey (TUBITAK) 2218-National Postdoctoral Research Fellowship Programme for the financial support.