Abstract
Chemical vapor deposition (CVD) is favorable for the growth of high-quality graphene on copper surfaces. Here, we employed CVD to synthesize large-grain (up to 70 µm), crystalline graphene with a controlled grain morphology. Graphene was characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and atomic force microscopy (AFM). The influence of methane (CH4 and hydrogen (H2) concentrations were evaluated during the CVD graphene growth.
Funding
The authors would like to acknowledge King Abdulaziz City for Science and Technology for funding this work.