Structural characterisation of anodic SiO₂ thin films on n-type Si

W. S. WoonElectronic Materials Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia

S. D. HutagalungElectronic Materials Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia

K. Y. CheongElectronic Materials Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia

Abstract

This article presents the results of anodic silicon dioxide (SiO₂) thin film on n-type silicon substrate. A mixture of nitric acid and deionised water has been used as the electrolyte for the anodisation process. The effects of supplied voltage and oxidation time on the structural properties of film have been investigated. It has found that thickness, refractive index, density, porosity and dielectric constant of the anodised film are depending on the investigated parameters. Defect free anodic oxide with morphology of round shape spikes has been successfully grown on the substrate.

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Structural characterisation of anodic SiO₂ thin films on n-type Si

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Structural characterisation of anodic SiO2 thin films on n-type Si

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Structural characterisation of anodic SiO₂ thin films on n-type Si