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Original Articles

Amorphous germanium I. A model for the structural and optical properties

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Pages 531-580 | Published online: 02 Jun 2006

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Marie-Luce Theye & Adriana Gheorghiu. (1985) Comparative study of amorphous Ge and amorphous GaAs. Philosophical Magazine B 52:3, pages 325-330.
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JohnC. Knights & Gerald Lucovsky. (1980) Hydrogen in amorphous semiconductors. Critical Reviews in Solid State and Materials Sciences 9:3, pages 211-283.
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G.N. Greaves, S.R. Elliott & E.A. Davis. (1979) Amorphous arsenic. Advances in Physics 28:1, pages 49-141.
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G.N. Greaves, E.A. Davis & J. Bordas. (1976) Optical properties of amorphous arsenic. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 34:2, pages 265-290.
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Articles from other publishers (147)

Eva Pospíšilová & Marek Mihalkovič. (2023) Prediction of coherent interfaces between diamond and clathrate structures. Computational Materials Science 226, pages 112228.
Crossref
Laurent J. Lewis. (2022) Fifty years of amorphous silicon models : the end of the story?. Journal of Non-Crystalline Solids 580, pages 121383.
Crossref
Jens R. Stellhorn, Shinya Hosokawa, Bernhard Kaiser, Koji Kimura, Nathalie Boudet, Nils Blanc, Hiroo Tajiri, Shinji Kohara & Wolf-Christian Pilgrim. (2021) The Structure of the Amorphous (GeTe) 1– x (Sb 2 Te 3 ) x System and Implications for its Phase-Change Properties . Zeitschrift für Physikalische Chemie 235:1-2, pages 141-167.
Crossref
Ka-Hyun Kim, Erik V. Johnson & Pere Roca i Cabarrocas. (2017) Current-induced and light-induced macroscopic changes in thin film solar cells: Device degradation mechanism. Solar Energy 143, pages 86-92.
Crossref
Vijay Richard D'Costa, Wei Wang, Daniel Schmidt & Yee-Chia Yeo. (2015) Parametrized dielectric functions of amorphous GeSn alloys. Journal of Applied Physics 118:12.
Crossref
Ricardo Andrade, Ernesto G. Birgin, Ivan Chambouleyron, Jos? Mario Mart?nez & Sergio D. Ventura. (2008) Estimation of the thickness and the optical parameters of several stacked thin films using optimization. Applied Optics 47:28, pages 5208.
Crossref
Z.M. Wang, J.Y. Wang, L.P.H. Jeurgens, F. Phillipp & E.J. Mittemeijer. (2008) Origins of stress development during metal-induced crystallization and layer exchange: Annealing amorphous Ge/crystalline Al bilayers. Acta Materialia 56:18, pages 5047-5057.
Crossref
Y Bouizem, A Belfedal, J D Sib, A Kebab & L Chahed. (2005) Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power. Journal of Physics: Condensed Matter 17:33, pages 5149-5158.
Crossref
Simon J. L. Billinge. (2004) The atomic pair distribution function: past and present. Zeitschrift für Kristallographie - Crystalline Materials 219:3, pages 117-121.
Crossref
V. Ligatchev. (2003) The long-range ordering, electron spectrum, and properties of amorphous silicon films – I. The generalized Skettrup model. Physica B: Condensed Matter 337:1-4, pages 333-345.
Crossref
Manuel Cardona. (2003) William Paul: a scientist, a teacher, and a friend. physica status solidi (b) 235:2, pages 211-220.
Crossref
S.-H Lin, J Braddock-Wilking & B.J Feldman. (2000) Chlorine and nitrogen doped carbon grown from a tetrachloroethylene and nitrogen feedstock. Solid State Communications 114:4, pages 193-196.
Crossref
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
S Vignoli, R Butté, R Meaudre, M Meaudre & P Roca i Cabarrocas. (1999) Structural properties depicted by optical measurements in hydrogenated polymorphous silicon. Journal of Physics: Condensed Matter 11:44, pages 8749-8757.
Crossref
I. Chambouleyron, J. M. Mart?nez, A. C. Moretti & M. Mulato. (1997) Retrieval of optical constants and thickness of thin films from transmission spectra. Applied Optics 36:31, pages 8238.
Crossref
R. Asal & H.N. Rutt. (1997) Optical properties of laser ablated gallium lanthanum sulphide chalcogenide glass thin films prepared at different deposition laser energy densities. Optical Materials 8:4, pages 259-268.
Crossref
T.-M. John, J. Bläsing, P. Veit & T. Drüsedau. (2011) Crystallization of Germanium-Carbon Alloys - Structure and Electronic Transport. MRS Proceedings 467.
Crossref
O Stenzel & R Petrich. (1995) Flexible construction of error functions and their minimization: application to the calculation of optical constants of absorbing or scattering thin-film materials from spectrophotometric data. Journal of Physics D: Applied Physics 28:5, pages 978-989.
Crossref
H. El-Zahed, A. El-Korashy & M. Dongol. (1995) Optical parameter studies of as-deposited and annealed Se1 − xTex films. Thin Solid Films 259:2, pages 203-211.
Crossref
C. Meneghini, F. Boscherini, F. Evangelisti & S. Mobilio. (1994) Structure of a - :H alloys by wide-angle x-ray scattering: Detailed determination of first- and second-shell environment for Si and C atoms . Physical Review B 50:16, pages 11535-11545.
Crossref
Dimitris Maroudas & Sokrates T. Pantelides. (1994) Point defects in crystalline silicon, their migration and their relation to the amorphous phase. Chemical Engineering Science 49:17, pages 3001-3014.
Crossref
N Elgun & E A Davis. (1994) Transport and optical properties of a-GaP prepared at different substrate temperatures. Journal of Physics: Condensed Matter 6:3, pages 779-790.
Crossref
S. R. Elliott. 1994. Defects and Disorder in Crystalline and Amorphous Solids. Defects and Disorder in Crystalline and Amorphous Solids 245 260 .
W. Paul, A.J. Lewis, G.A.N. Connell & T.D. Moustakas. (1993) Doping, Schottky barrier and p-n junction formation in amorphous germanium and silicon by rf sputtering. Solid State Communications 88:11-12, pages 1019-1022.
Crossref
Olaf Stenzel, Ralf Petrich & Martina Vogel. (1993) The optical constants of the so-called ?diamond-like? carbon layers and their description in terms of semiempirical dispersion models. Optical Materials 2:3, pages 125-142.
Crossref
M. Vogel, O. Stenzel, R. Petrich, G. Schaarschmidt & W. Scharff. (1993) The position of the fundamental absorption edge and activation energies for thermally activated electrical conductivity in amorphous carbon layers. Thin Solid Films 227:1, pages 74-89.
Crossref
Jeffrey S. Lannin. (1992) Finite size effects on the dynamics of amorphous and nanocrystalline materials. Journal of Non-Crystalline Solids 141, pages 233-240.
Crossref
A. F. Ruppert, P. D. Persans, G. J. Hughes, K. S. Liang, B. Abeles & W. Lanford. (1991) Density of ultrathin amorphous silicon and germanium sublayers in periodic amorphous multilayers. Physical Review B 44:20, pages 11381-11385.
Crossref
Keiji Tanaka. (1991) Amorphous Ge under pressure. Physical Review B 43:5, pages 4302-4307.
Crossref
W. Paul, S. J. Jones, F. C. Marques, D. Pang, W. A. Turner, A. E. Wetsel, P. Wickboldt & J. H. Chen. (2011) Influence of Deposition Conditions on the optical and Electronic Properties of a-Ge:H. MRS Proceedings 219.
Crossref
R. Tsu, J. Gonzalez-Hernandez, J. Doehler & S. R. Ovshinsky. 1991. Disordered Materials. Disordered Materials 122 125 .
O. B. Wright, T. Matsumoto, T. Hyoguchi & K. Kawashima. 1991. Physical Acoustics. Physical Acoustics 695 702 .
G. Petö, L. Rosta, J. Kanski, A. Barna, A. Menelle & R. Belissent. (1990) Indication of an anomalous amorphous state of Ge induced by heavy-ion implantation. Journal of Non-Crystalline Solids 125:3, pages 258-263.
Crossref
K. Tanaka. (1990) Crystallization of amorphous Ge. Solid State Communications 76:2, pages 213-215.
Crossref
W.-L. Shao, J. Shinar, B. C. Gerstein, F. Li & J. S. Lannin. (1990) Magic-angle spinning NMR study of short-range order in a -Si . Physical Review B 41:13, pages 9491-9494.
Crossref
Suvarna Babras, S.V. Rajarshi, R.O. Dusane, V.G. Bhide & S.T. Kshirsagar. (1990) Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 119:3, pages 342-346.
Crossref
G.N. Greaves. 1990. Advances in Structural Analysis. Advances in Structural Analysis 1 76 .
M. Berti, G. Mazzi, A.V. Drigo, A. Migliori, E. Jannitti & S. Nicoletti. (1989) Laser induced epitaxial regrowth of Si1-xGex/Si layers produced by Ge ion implantation. Applied Surface Science 43:1-4, pages 158-164.
Crossref
W.-L. Shao, J. Shinar, S. Mitra, B.C. Gerstein, F. Li, J. Fortner & J.S. Lannin. (1989) NMR and short range order in amorphous silicon. Journal of Non-Crystalline Solids 114, pages 232-234.
Crossref
G. Peto, J. Kanski & G. Holmen. (1989) Properties of ultrahigh vacuum self-implantation-induced amorphous germanium. Applied Physics Letters 55:7, pages 692-693.
Crossref
Ch. Kleint & M. Merkel. (1989) Optical reflectance as a tool for bulk and adsorbate studies: Application to variously treated Si(111) surfaces. Surface Science 213:2-3, pages 657-668.
Crossref
J. Fortner & J. S. Lannin. (1989) Radial distribution functions of amorphous silicon. Physical Review B 39:8, pages 5527-5530.
Crossref
S. Logothetidis, S. Boultadakis, P. Grigoriadis & G. Kiriakidis. (1989) Microstructural properties and density dependence of the optical properties of microcrystalline silicon films by spectroscopic ellipsometry and electron microscopy. Thin Solid Films 169:1, pages 87-104.
Crossref
Keiji Tanaka. (1989) Structural phase transitions in chalcogenide glasses. Physical Review B 39:2, pages 1270-1279.
Crossref
M L Theye. (1989) Optical Absorption in Amorphous Semiconductors. Physica Scripta T29, pages 157-161.
Crossref
D. Eres, D.B. Geohegan, D.H. Lowndes & D.N. Mashburn. (1989) ArF laser photochemical deposition of amorphous silicon from disilane: Spectroscopic studies and comparison with thermal CVD. Applied Surface Science 36:1-4, pages 70-80.
Crossref
H. T. Grahn, H. J. Maris, J. Tauc & B. Abeles. (1988) Time-resolved study of vibrations of a -Ge:H/ a -Si:H multilayers . Physical Review B 38:9, pages 6066-6074.
Crossref
Jeffrey S. Lannin. (1988) Local Structural Order in Amorphous Semicondcutors. Physics Today 41:7, pages 28-35.
Crossref
J. Fortner & J. S. Lannin. (1988) Structural relaxation and order in ion-implanted Si and Ge. Physical Review B 37:17, pages 10154-10158.
Crossref
T.V Herak, J.J Schellenberg, P.K Shufflebotham, K.C Kao & H.C Card. (1988) Silicon from microwave plasmas: Optical properties and their relation to structure. Journal of Non-Crystalline Solids 103:1, pages 125-130.
Crossref
Petr Viščor. (1988) In-situ measurements of the density of amorphous germanium prepared in ultra-high vacuum. Journal of Non-Crystalline Solids 101:2-3, pages 170-178.
Crossref
Petr Viščor. (1988) Structure and existence of the first sharp diffraction peak in amorphous germanium prepared in UHV and measured in-situ. Journal of Non-Crystalline Solids 101:2-3, pages 156-169.
Crossref
S. K. Biswas, S. Chaudhuri & A. Choudhury. (1988) Effects of heat treatment on the optical and structural properties of InSe thin films. Physica Status Solidi (a) 105:2, pages 467-475.
Crossref
Petr Vi??or. (1987) Structure and the existence of the first sharp diffraction peak in amorphous germanium prepared in UHV and measured in-situ. Journal of Non-Crystalline Solids 97-98, pages 179-182.
Crossref
B. Yang, L. J. Pilione, J. E. Yehoda, K. Vedam & R. Messier. (1987) Nonuniformity in void concentration between the initial and final growth stage of sputtered -Ge films studied using spectroscopic ellipsometry . Physical Review B 36:11, pages 6206-6208.
Crossref
N. Tomassini, A. Amore Bonapasta, A. Lapiccirella, K.W. Lodge & S.L. Altmann. (1987) Force field treatment of an amorphous germanium model. Journal of Non-Crystalline Solids 93:2-3, pages 241-256.
Crossref
S V Chandole, Ujwala V Hulsurkar & S S Shah. (1987) Influence of substrate temperature on the electrical and optical properties of amorphous germanium films. Bulletin of Materials Science 9:1, pages 47-54.
Crossref
U Dersch, M Grunewald, H Overhof & P Thomas. (1987) Theoretical studies of optical absorption in amorphous semiconductors. Journal of Physics C: Solid State Physics 20:1, pages 121-143.
Crossref
Jeffrey S. Lannin. 1987. Disordered Semiconductors. Disordered Semiconductors 283 295 .
J. R. Blanco, P. J. McMarr, K. Vedam & R. C. Ross. (1986) Spectroscopic ellipsometry study of glow-discharge-deposited thin films of a -Ge:H . Journal of Applied Physics 60:10, pages 3724-3731.
Crossref
P. J. McMarr, J. R. Blanco, K. Vedam, R. Messier & L. Pilione. (1986) Thickness-dependent void fraction of rf-sputtered amorphous Ge films by spectroscopic ellipsometry. Applied Physics Letters 49:6, pages 328-330.
Crossref
G. P. Srivastava, K. N. Tripathi & N. K. Sehgal. (1986) Effect of laser irradiation on the electrical properties of amorphous germanium films. Journal of Materials Science 21:8, pages 2972-2976.
Crossref
T.D. Moustakas. (1986) Photovoltaic properties of amorphous silicon produced by reactive sputtering. Solar Energy Materials 13:5, pages 373-384.
Crossref
W.B Jackson, C.C Tsai & S.M Kelso. (1985) Implications of recent density-of-states measurements for optical and transport properties of a-Si:H. Journal of Non-Crystalline Solids 77-78, pages 281-290.
Crossref
K.C Hass & H Ehrenreich. (1985) Electronic structure models, bonding, and optical moments in amorphous and crystalline semiconductors. Annals of Physics 164:1, pages 77-102.
Crossref
W. B. Jackson, S. M. Kelso, C. C. Tsai, J. W. Allen & S.-J. Oh. (1985) Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon. Physical Review B 31:8, pages 5187-5198.
Crossref
K. D. Mackenzie, J. R. Eggert, D. J. Leopold, Y. M. Li, S. Lin & William Paul. (1985) Structural, electrical, and optical properties of a - :H and an inferred electronic band structure . Physical Review B 31:4, pages 2198-2212.
Crossref
D. Kirillov, R. A. Powell & D. T. Hodul. (2011) Amorphous Phase Transformation During Rapid Thermal Annealing of Ion-Implanted Si. MRS Proceedings 52.
Crossref
W. B. Jackson, S.-J. Oh, C. C. Tsai, S. M. Kelso & J. W. Allen. 1985. Proceedings of the 17th International Conference on the Physics of Semiconductors. Proceedings of the 17th International Conference on the Physics of Semiconductors 825 828 .
George D. Cody. 1985. Physics of Disordered Materials. Physics of Disordered Materials 327 333 .
Jeffrey S. Lannin. 1985. Physics of Disordered Materials. Physics of Disordered Materials 175 188 .
J.C. Bourgoin & R. Asomoza. (1984) Solid phase growth of silicon and germanium. Journal of Crystal Growth 69:2-3, pages 489-498.
Crossref
P.D. Persans, A.F. Ruppert, S.S. Chan & G.D. Cody. (1984) Relationship between bond angle disorder and the optical edge of aGe:H. Solid State Communications 51:4, pages 203-207.
Crossref
W. Müller, J. Pirrung, B. Schröder & J. Geiger. (1984) Preparation of low defect grade a-Si:H films by RF magnetron sputtering technique. Solar Energy Materials 10:2, pages 171-186.
Crossref
Gy. Zentai & L. Pog?ny. (1984) Temperature and substrate dependence of the morphology of glow-discharge-deposited a-Si:H. Thin Solid Films 116:1-3, pages 251-257.
Crossref
J. E. Graebner & L. C. Allen. (1984) Thermal conductivity of amorphous germanium at low temperatures. Physical Review B 29:10, pages 5626-5633.
Crossref
A.K. Batabyal, P. Chaudhuri, Swati Ray & A.K. Barua. (1984) The influence of deposition parameters on the properties of amorphous silicon thin films produced by the magnetron sputtering method. Thin Solid Films 112:1, pages 51-60.
Crossref
J. R. Blanco, R. Messier, K. Vedam & P. J. McMarr. (2011) Spectroscopic Ellipsometry Study of rf-Sputtered a-Ge Films. MRS Proceedings 38.
Crossref
T.D. Moustakas. 1984. Hydrogenated Amorphous Silicon - Part A: Preparation and Structure. Hydrogenated Amorphous Silicon - Part A: Preparation and Structure 55 82 .
Jeffrey S. Lannin. 1984. Hydrogenated Amorphous Silicon - Optical Properties. Hydrogenated Amorphous Silicon - Optical Properties 159 195 .
D. Goldschmidt. (1983) Temperature dependence of the refractive-index dispersion in amorphous germanium at elevated temperatures. Physical Review B 28:12, pages 7175-7182.
Crossref
G Fasol & P Viscor. (1983) Transient photoconductivity in UHV-evaporated amorphous germanium films. Journal of Physics C: Solid State Physics 16:29, pages 5715-5721.
Crossref
R. Tsu, J. Gonzalez-Hernandez, J. Doehler & S.R. Ovshinsky. (1983) Order parameters in a-Si systems. Solid State Communications 46:1, pages 79-82.
Crossref
N. Maley, L.J. Pilione, S.T. Kshirsagar & J.S. Lannin. (1983) Structural order and optical properties of tetrahedral amorphous solids. Physica B+C 117-118, pages 880-882.
Crossref
G.D. Cody, B.G. Brooks & B. Abeles. (1982) Optical absorption above the optical gap of amorphous silicon hydride. Solar Energy Materials 8:1-3, pages 231-240.
Crossref
J. S. Lannin, L. J. Pilione, S. T. Kshirsagar, R. Messier & R. C. Ross. (1982) Variable structural order in amorphous silicon. Physical Review B 26:6, pages 3506-3509.
Crossref
J Nag & S P Sen Gupta. (1982) Amorphous semiconductors: Structural models. Bulletin of Materials Science 4:4, pages 375-402.
Crossref
Dan Goldschmidt. (1982) Amorphous germanium as a medium temperature solar selective absorber. Thin Solid Films 90:2, pages 139-143.
Crossref
O. Cheshnovsky, U. Even & Joshua Jortner. (1982) Optical studies of the metal-nonmetal transition in a metal—rare-gas disordered system. Physical Review B 25:5, pages 3350-3368.
Crossref
S. T. Kshirsagar & J. S. Lannin. (1982) Structural order in anneal-stable amorphous silicon. Physical Review B 25:4, pages 2916-2919.
Crossref
William Paul & David A. Anderson. (1981) Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering. Solar Energy Materials 5:3, pages 229-316.
Crossref
L.J. Pilione, R.J. Pomian & J.S. Lannin. (1981) Optical absorption in sputtered amorphous phosphorus. Solid State Communications 39:8, pages 933-936.
Crossref
F. Evangelisti, M.G. Proietti, A. Balzarotti, F. Comin, L. Incoccia & S. Mobilio. (1981) EXAFS investigation of amorphous-to-crystal transition in Ge. Solid State Communications 37:5, pages 413-416.
Crossref
H. Fritzsche. (1980) Characterized of glow-discharge deposited a-Si:H. Solar Energy Materials 3:4, pages 447-501.
Crossref
J.F. Graczyk. (1980) The effects of oxygen and copper impurities on the structure of amorphous germanium. Thin Solid Films 70:2, pages 303-309.
Crossref
M.L. Theye, A. Gheorghiu, M. Gandais & S. Fisson. (1980) Structural relaxation and crystallization of amorphous Ge films. Journal of Non-Crystalline Solids 37:3, pages 301-323.
Crossref
M. Wautelet, L.D. Laude & R. Andrew. (1980) Persistent photoconductivity and dangling bonds in amorphous germanium. Physics Letters A 77:4, pages 274-276.
Crossref
R.G. Buckley. (1980) The electrical and optical properties of amorphous germanium-gallium alloys. Journal of Non-Crystalline Solids 37:2, pages 231-240.
Crossref
BRENTON L. MATTES. 1980. Polycrystalline and Amorphous Thin Films and Devices. Polycrystalline and Amorphous Thin Films and Devices 1 15 .
G.D. Cody, B. Abeles, C.R. Wronski, B. Brooks & W.A. Lanford. (1980) Optical absorption of SiH0.16 films near the optical GAP. Journal of Non-Crystalline Solids 35-36, pages 463-468.
Crossref
P. Viščor & D. Allan. (1979) Non-destructive density measurements on thin films of amorphous germanium. Thin Solid Films 62:2, pages 259-263.
Crossref
Eva C. Freeman & William Paul. (1979) Optical constants of rf sputtered hydrogenated amorphous Si. Physical Review B 20:2, pages 716-728.
Crossref
T. D. Moustakas. (1979) Sputtered hydrogenated amorphous silicon. Journal of Electronic Materials 8:3, pages 391-435.
Crossref
J.C. Knights, G. Lucovsky & R.J. Nemanich. (1979) Defects in plasma-deposited a-Si: H. Journal of Non-Crystalline Solids 32:1-3, pages 393-403.
Crossref
Uwe Köster. (1979) Crystallization and decomposition of amorphous semiconductors. Advances in Colloid and Interface Science 10:1, pages 129-172.
Crossref
G. A. N. Connell. 1985. Amorphous Semiconductors. Amorphous Semiconductors 73 111 .
M.H. Brodsky & M. Cardona. (1978) Local order as determined by electronic and vibrational spectroscopy: Amorphous semiconductors. Journal of Non-Crystalline Solids 31:1-2, pages 81-108.
Crossref
E. C. Freeman & William Paul. (1978) Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon. Physical Review B 18:8, pages 4288-4300.
Crossref
P. A. Thomas, M. H. Brodsky, D. Kaplan & D. Lepine. (1978) Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon: In situ and ex situ studies . Physical Review B 18:7, pages 3059-3073.
Crossref
K. Dettmer, H. Müller & F. R. Kessler. (1978) Surface influences of glass substrates on lattice parameters and phase transition temperature of evaporated Ge thin films. Physica Status Solidi (a) 49:1, pages 255-260.
Crossref
S. Guha & K.L. Narasimhan. (1978) On variable range hopping in amorphous films of germanium and silicon. Thin Solid Films 50, pages 151-155.
Crossref
K.L. Chopra, H.S. Randhawa & L.K. Malhotra. (1977) The kinetics of transformation in amorphous germanium alloy films. Thin Solid Films 47:3, pages 203-210.
Crossref
T. D. Moustakas & William Paul. (1977) Transport and recombination in sputtered hydrogenated amorphous germanium. Physical Review B 16:4, pages 1564-1576.
Crossref
T.D. Moustakas, D.A. Anderson & William Paul. (1977) Preparation of highly photoconductive amorphous silicon by rf sputtering. Solid State Communications 23:3, pages 155-158.
Crossref
L. Csepregi, R.P. Küllen, J.W. Mayer & T.W. Sigmon. (1977) Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals. Solid State Communications 21:11, pages 1019-1021.
Crossref
S G Tomlin, E Khawaja & G K M Thutupalli. (1976) The optical properties of amorphous and crystalline germanium. Journal of Physics C: Solid State Physics 9:23, pages 4335-4347.
Crossref
W. Paul, A.J. Lewis, G.A.N. Connell & T.D. Moustakas. (1976) Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering. Solid State Communications 20:10, pages 969-972.
Crossref
L. Kubler, G. Gewinner, J. J. Koulmann & A. Jaéglé. (2006) EPR study on amorphous germanium oxygen, deposition angle, annealing, and substrate temperature effects. physica status solidi (b) 78:1, pages 149-158.
Crossref
H.S. Randhawa, P. Nath, L.K. Malhotra & K.L. Chopra. (1976) Structure of amorphous Ge alloy films. Solid State Communications 20:1, pages 73-76.
Crossref
H. S. Randhawa, L. K. Malhotra, H. K. Sehgal & K. L. Chopra. (1976) Structural transformations in a-Ge alloy films. Physica Status Solidi (a) 37:1, pages 313-320.
Crossref
Norman A. Blum & Charles Feldman. (1976) The crystallization of amorphous germanium films. Journal of Non-Crystalline Solids 22:1, pages 29-35.
Crossref
S. K. Barthwal & K. L. Chopra. (1976) Thermoelectric power of amorphous germanium films. Physica Status Solidi (a) 36:2, pages 533-549.
Crossref
C Raisin, G Leveque & S Robin-Kandare. (1976) Electronic state of amorphous arsenic. Journal of Physics C: Solid State Physics 9:15, pages 2887-2897.
Crossref
K. L. Chopra & D. K. Pandya. (1976) Obliquely deposited amorphous Ge films. II. Electrical properties. Physica Status Solidi (a) 36:1, pages 89-100.
Crossref
Adam J. Lewis. (1976) Use of hydrogenation in the study of the transport properties of amorphous germanium. Physical Review B 14:2, pages 658-668.
Crossref
K.P. Chik & Pui-Kong Lim. (1976) Annealing and crystallization of amorphous germanium thin films. Thin Solid Films 35:1, pages 45-56.
Crossref
P. Nath, D. K. Pandya & K. L. Chopra. (1976) Amorphous Ge alloy films. III. Optical properties. Physica Status Solidi (a) 34:1, pages 405-411.
Crossref
Adam J. Lewis. (1976) Conductivity and thermoelectric power of amorphous germanium and amorphous silicon. Physical Review B 13:6, pages 2565-2575.
Crossref
G. A. N. Connell & J. R. Pawlik. (1976) Use of hydrogenation in structural and electronic studies of gap states in amorphous germanium. Physical Review B 13:2, pages 787-804.
Crossref
J.D. Joannopoulos & Marvin L. Cohen. 1976. 71 148 .
Uwe KösterUwe Köster. 1976. Kristallisation und Entmischung amorpher Germanium-Legierungen. Kristallisation und Entmischung amorpher Germanium-Legierungen 55 60 .
D. A. Greenwood. 1976. Physics of Nonmetallic Thin Films. Physics of Nonmetallic Thin Films 93 119 .
F. Schwidefsky. (1975) Model calculations on the influence of dangling bonds on the optical properties of amorphous silicon films. Thin Solid Films 30:2, pages 233-244.
Crossref
J Robertson. (1975) Valence s bands in amorphous chalcogens and arsenic. Journal of Physics C: Solid State Physics 8:19, pages 3131-3136.
Crossref
D. K. Pandya, A. C. Rastogi & K. L. Chopra. (1975) Obliquely deposited amorphous Ge films. I. Growth and structure. Journal of Applied Physics 46:7, pages 2966-2975.
Crossref
C.T. Wu & H.L. Luo. (1975) Pressure effect on vapor-deposited amorphous materials. Journal of Non-Crystalline Solids 18:1, pages 21-28.
Crossref
J.F. Graczyk & P. Chaudhari. (1975) Relaxed continuous random network models (II). Journal of Non-Crystalline Solids 17:3, pages 299-318.
Crossref
G. A. N. Connell. (2006) Electrons and phonons in amorphous semiconductors. physica status solidi (b) 69:1, pages 9-24.
Crossref
R.W. Keyes. (1975) Antibonding potentials and dielectric properties of amorphous phases. Physics Letters A 51:7, pages 395-397.
Crossref
V Capek. (1975) Unified approach to the DC and AC conductivity and optical absorption of amorphous semiconductors below the fundamental edge. Journal of Physics C: Solid State Physics 8:4, pages 479-491.
Crossref
Stuart A. Rice. 1975. Topics in Current Chemistry. Topics in Current Chemistry 109 200 .
Jan Tauc. 1975. Optical Properties of Highly Transparent Solids. Optical Properties of Highly Transparent Solids 245 260 .
B. Y. Tong, J. R. Swenson & F. C. Choo. (1974) Density of states in crystalline and amorphous germanium. Physical Review B 10:8, pages 3338-3341.
Crossref
G. A. N. Connell. 1974. Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Proceedings of the Twelfth International Conference on the Physics of Semiconductors 1003 1011 .

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