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Advances in Physics Volume 35, 1986 - Issue 3
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Original Articles

The thermal oxidation of silicon the special case of the growth of very thin films

F. Rochet Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 Place Jussieu, 75251, Paris Cedex 05, France
,
S. Rigo Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 Place Jussieu, 75251, Paris Cedex 05, France
,
M. Froment Physique des Liquides et Electrochimie (LP 15), Université Pierre et Marie Curie, Tour 22, 4 Place Jussieu, 75230, Paris Cedex 05, France
,
C. d'Anterroches Centre National d'étude des télécommunications, Chemin du Vieux Chˆene, 38243, Meylan Cedex, France
,
C. Maillot Laboratoire de Chimie Physique (LA 176), Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75231, Paris Cedex 05, France; Laboratoire Central de Recherches-Thomson, Domaine de Corbeville, BP 10, 91401, Orsay, France
,
H. Roulet Laboratoire de Chimie Physique (LA 176), Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75231, Paris Cedex 05, France
&
G. Dufour Laboratoire de Chimie Physique (LA 176), Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75231, Paris Cedex 05, France
 show all
Pages 237-274 | Received 15 Jul 1986, Published online: 28 Jul 2006

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Volker Presser & KlausG. Nickel. (2008) Silica on Silicon Carbide. Critical Reviews in Solid State and Materials Sciences 33:1, pages 1-99.
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Takeo Hattori. (1995) Chemical Structures of the SiO2Si Interface. Critical Reviews in Solid State and Materials Sciences 20:4, pages 339-382.
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M.P. Murrell, C.J. Sofield & S. Sugden. (1991) Silicon transport during oxidation. Philosophical Magazine B 63:6, pages 1277-1287.
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F.M. Ross & W.M. Stobbs. (1991) A study of the initial stages of the oxidation of silicon using the Fresnel method. Philosophical Magazine A 63:1, pages 1-36.
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J. Robertson & M. I. Manning. (1989) Healing layer formation in Fe–Cr–Si ferritic steels. Materials Science and Technology 5:8, pages 741-753.
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N.F. Mott, S. Rigo, F. Rochet & A.M. Stoneham. (1989) Oxidation of silicon. Philosophical Magazine B 60:2, pages 189-212.
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F. Rochet, M. Froment, C. D'anterroches, H. Roulet & G. Dufour. (1989) Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O2 . Philosophical Magazine B 59:3, pages 339-363.
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EugeneA. Irene. (1988) Models for the oxidation of silicon. Critical Reviews in Solid State and Materials Sciences 14:2, pages 175-223.
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John Robertson. (1987) The growth mechanism of thin oxide films on Si. Philosophical Magazine B 55:6, pages 673-684.
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A.M. Stoneham, C.R. M. Grovenor & A. Cerezo. (1987) Oxidation and the structure of the silicon/oxide interface. Philosophical Magazine B 55:2, pages 201-210.
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