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Ferroelectrics Volume 152, 1994 - Issue 1
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Original Articles

Apparent thickness effect on properties of ferroelectric PZT thin layers

Charles D. E. Lakeman Department of Materials Science and Engineering, Materials Research Laboratory, and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, 61801, IL
&
David A. Payne. Department of Materials Science and Engineering, Materials Research Laboratory, and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, 61801, IL
Pages 145-150 | Published online: 25 Feb 2011

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K. Kundzins, V. Zauls, L. Cakare–Samardzija & A. Sternberg. (2006) Studies of Local Induced Polarization in Modified Ferroelectric Thin Films. Ferroelectrics 340:1, pages 115-120.
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AlexanderK. Tagantsev. (1997) Size effects in polarization switching in ferroelectric thin films. Integrated Ferroelectrics 16:1-4, pages 237-244.
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GeneH. Haertling. (1997) Thickness dependent properties of acetate-derived PLZT films. Integrated Ferroelectrics 14:1-4, pages 219-228.
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AlexanderK. Tagantsev. (1996) Mechanisms of polarization switching in ferroelectric thin films. Ferroelectrics 184:1, pages 79-88.
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Articles from other publishers (22)

Hyeon Woo Park, Seung Dam Hyun, In Soo Lee, Suk Hyun Lee, Yong Bin Lee, Minsik Oh, Beom Yong Kim, Seung Gyu Ryoo & Cheol Seong Hwang. (2021) Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer. Nanoscale 13:4, pages 2556-2572.
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Junji Cheng, Haimeng Huang, Bo Yi, Weijia Zhang & Wai Tung Ng. (2020) A TCAD Study on Lateral Power MOSFET With Dual Conduction Paths and High-$k$ Passivation. IEEE Electron Device Letters 41:2, pages 260-263.
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He, Li, Chen, Qian, Geng, Bi, Mu, Hou & Chou. (2019) Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr0.53Ti0.47)O3 Thin Films. Sensors 19:19, pages 4073.
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Chin-Chi Cheng. (2016) Voltage effect of corona poling on characteristics of PbZr x Ti 1−x O 3 (PZT) film. Ceramics International 42:11, pages 12751-12755.
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Aaron J. Welsh, Rudeger H. T. Wilke, Michael A. Hickner & Susan Trolier-McKinstry. (2013) Low-Cost, Damage-Free Patterning of Lead Zirconate Titanate Films. Journal of the American Ceramic Society 96:9, pages 2799-2805.
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Y.J. Zhang, X.J. Zheng, F. Jiao & H.P. Hu. (2013) The effect of strain and dead layer on the nonlinear electric-mechanical behavior of ferroelectric thin films. Computational Materials Science 77, pages 377-383.
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Guifang Han, Jungho Ryu, Woon-Ha Yoon, Jong-Jin Choi, Byung-Dong Hahn & Dong-Soo Park. (2011) Effect of Film Thickness on the Piezoelectric Properties of Lead Zirconate Titanate Thick Films Fabricated by Aerosol Deposition. Journal of the American Ceramic Society 94:5, pages 1509-1513.
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I F Fujii, E H Hong & S Trolier-McKinstry. (2010) Thickness dependence of dielectric nonlinearity of lead zirconate titanate films. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 57:8, pages 1717-1723.
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T. A. Berfield, R. J. Ong, D. A. Payne & N. R. Sottos. (2007) Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films. Journal of Applied Physics 101:2.
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Aleksey Etin, Gennady E. Shter, Gideon S. Grader & George M. Reisner. (2006) Interrelation of Ferroelectricity, Morphology, and Thickness in Sol–Gel‐Derived PbZr x Ti 1− x O 3 Films . Journal of the American Ceramic Society 90:1, pages 77-83.
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Ryan J. Ong, David A. Payne & Nancy R. Sottos. (2005) Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties. Journal of the American Ceramic Society 88:10, pages 2839-2847.
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R.J. Ong, T.A. Berfield, N.R. Sottos & D.A. Payne. (2005) Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties. Journal of the European Ceramic Society 25:12, pages 2247-2251.
Crossref
Mingjiao Liu, Hong Koo Kim & Jean Blachere. (2002) Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories. Journal of Applied Physics 91:9, pages 5985-5996.
Crossref
Stephen Ducharme, S.P. Palto & V.M. Fridkin. 2002. Handbook of Thin Films. Handbook of Thin Films 545 591 .
C. H. Lin, P. A. Friddle, C. H. Ma, A. Daga & Haydn Chen. (2001) Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si. Journal of Applied Physics 90:3, pages 1509-1515.
Crossref
L. Lian & N. R. Sottos. (2000) Effects of thickness on the piezoelectric and dielectric properties of lead zirconate titanate thin films. Journal of Applied Physics 87:8, pages 3941-3949.
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I. Boerasu, L. Pintilie, I. Matei & I. Pintilie. (2000) Preparation and ferroelectric properties of graded Pb(Ti/sub x/Zr/sub 1-x/)O/sub 3/ thin films. Preparation and ferroelectric properties of graded Pb(Ti/sub x/Zr/sub 1-x/)O/sub 3/ thin films.
Rajnish Kurchania & Steven J. Milne. (2011) Characterization of sol-gel Pb(Zr 0.53 Ti 0.47 )O 3 films in the thickness range 0.25–10 μm . Journal of Materials Research 14:5, pages 1852-1859.
Crossref
A. K. Tagantsev & I. A. Stolichnov. (1999) Injection-controlled size effect on switching of ferroelectric thin films. Applied Physics Letters 74:9, pages 1326-1328.
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Ki Hyun Yoon, Ji Hwan Shin, Jeong Hwan Park & Dong Heon Kang. (1998) Stacking effects on dielectric properties of sol-gel derived Pb(Zr0.53Ti0.47)O3/PbTiO3 thin films. Journal of Applied Physics 83:7, pages 3626-3629.
Crossref
P.Y. Chu, D.J. Taylor, P. Zurcher, B.E. White, S. Zafar, B. Jiang, B. Melnick, R.E. Jones, S.J. Gillespie, Wei Chen & N. Cave. (1996) Effects of film thickness and process parameters on the properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric capacitors for non-volatile memory applications. Effects of film thickness and process parameters on the properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric capacitors for non-volatile memory applications.
S. S. Sengupta, D. Roberts, J.-F. Li, M. C. Kim & D. A. Payne. (1995) Field-induced phase switching and electrically driven strains in sol-gel derived antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin layers. Journal of Applied Physics 78:2, pages 1171-1177.
Crossref

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