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Radiation Effects Volume 37, 1978 - Issue 3-4
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Original Articles

A three-stage model for the development of secondary defects in ion-implanted silicon

K. Seshan Materials and Molecular Research Division, Lawrence Berkeley Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California, 94720
&
J. Washburn Materials and Molecular Research Division, Lawrence Berkeley Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, California, 94720
Pages 147-153 | Received 02 Dec 1976, Published online: 13 Sep 2006

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F.F. Komarov, E.V. Kotov, A.P. Novikov, S.A. Petrov & V.I. Chit'ko. (1987) Residual defects in silicon after As+ion implantation at self-annealing regimes. Radiation Effects 105:1-2, pages 79-84.
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W. Mayer, D. Grasse & J. Peisl. (1984) Annealing behaviour of neutron-irradiated silicon studied by diffuse X-ray scattering. Radiation Effects 84:1-2, pages 107-129.
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PaulK. Chu, Dachang Zhu & G.H. Morrison. (1982) SIMS studies on anomalous behavior of phosphorus and other implants in silicon. Radiation Effects 61:3-4, pages 201-205.
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F.F. Komarov, V.S. Solovev & S.Yu. Skiryaev. (1981) Directional distribution of burgers vectors op dislocation loops in ion-implanted silicon. Radiation Effects 58:6, pages 177-181.
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H.F. Kappert, N. Pfannkuche, K.F. Heidemann & E. te Kaat. (1979) Spatial correlation between primary and secondary defect profiles after high dose self-irradiation of Si crystals. Radiation Effects 45:1-2, pages 33-43.
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Articles from other publishers (27)

J.A van den Berg, S Zhang, S Whelan, D.G Armour, R.D Goldberg, P Bailey & T.C.Q Noakes. (2001) Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 183:1-2, pages 154-165.
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K. K. Bourdelle, D. J. Eaglesham, D. C. Jacobson & J. M. Poate. (1999) The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon. Journal of Applied Physics 86:3, pages 1221-1225.
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C. Flink, S. Mui, H. Gottschalk, J. Palm & E. R. Weber. (2011) Formation of Subthreshold Defects in Erbium Implanted Silicon. MRS Proceedings 532.
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Sebania Libertino, Janet L. Benton, Salvatore Coffa & Dave J. Eaglesham. (2011) Defect Evolution in Ion Implanted Si: from Point to Extended Defects. MRS Proceedings 504.
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R.D. Goldberg, T.W. Simpson, I.V. Mitchell, P.J. Simpson, M. Prikryl & G.C. Weatherly. 1996. Ion Beam Modification of Materials. Ion Beam Modification of Materials 216 221 .
R.D. Goldberg, T.W. Simpson, I.V. Mitchell, P.J. Simpson, M. Prikryl & G.C. Weatherly. (1995) Secondary defect formation in self-ion irradiated silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106:1-4, pages 216-221.
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S. Acco, J.S. Custer & F.W. Saris. (1995) Avoiding end-of-range dislocations in ion-implanted silicon. Materials Science and Engineering: B 34:2-3, pages 168-174.
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J.R. Liefting, J.S. Custer & F.W. Saris. (1994) Time evolution of dislocation formation in ion implanted silicon. Materials Science and Engineering: B 25:1, pages 60-67.
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J.G.E. Klappe, I. Bársony, J.R. Liefting & T.W. Ryan. (1993) Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction. Thin Solid Films 235:1-2, pages 189-197.
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R. D. Goldberg, T. W. Simpson, I. V. Mitchell & P. J. Schultz.. (2011) Studies of Dislocation Formation in Annealed Self-Ion Irradiated Silicon. MRS Proceedings 316.
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R.J. Schreutelkamp, J.S. Custer, J.R. Liefting, W.X. Lu & F.W. Saris. (1991) Pre-amorphization damage in ion-implanted silicon. Materials Science Reports 6:7-8, pages 275-366.
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R. Oshima, S. Honda, G.C. Hua, T. Tanabe & F.E. Fujita. (1991) Defects in Si irradiated with D-T neutrons, D and He ions. Journal of Nuclear Materials 179-181, pages 947-950.
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Ryuichiro Oshima, Shoichiro Honda & Tetsuo Tanabe. (2020) Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination. Proceedings, annual meeting, Electron Microscopy Society of America 48:2, pages 490-491.
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M. K. El-Ghor, O. W. Holland, C. W. White & S. J. Pennycook. (2011) Structural characterization of damage in Si(100) produced by MeV Si + ion implantation and annealing . Journal of Materials Research 5:2, pages 352-359.
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M. Tamura & K. Ohyu. (1989) Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing. Applied Physics A Solids and Surfaces 49:2, pages 149-155.
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D. Jawokska, E. Tarnowska, A. P. Kobzev & R. A. Ilkhamov. (1989) Depth Distribution of the Gettered Au Atoms Measured by Means of RBS and Radioactive Methods. Physica Status Solidi (a) 112:1, pages 385-389.
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M. Tamura, N. Natsuaki, Y. Wada & E. Mitani. (1987) MeV-energy B+, P+ and As+ ion implantation into Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 21:1-4, pages 438-446.
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J. Kotliński, K. Mojejko-Kotlińska, M. Subotowicz & I. Beylowska. (1986) Deep Levels in Si(p) Implanted with C+, N+, O+, and Ne+ Ions Measured by DLTS Method. physica status solidi (a) 94:1, pages 385-389.
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I. W. Wu & L. J. Chen. (1985) Characterization of microstructural defects in BF+2 -implanted silicon. Journal of Applied Physics 58:8, pages 3032-3038.
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P. Ling, R. Gronsky & J. Washburn. (2020) Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon. Proceedings, annual meeting, Electron Microscopy Society of America 40, pages 460-461.
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Eliezer Dovid Richmond, Alvin R. Knudson & Tom J. Magee. (1982) New developments in the defect structure of implanted furnace-annealed silicon on sapphire. Thin Solid Films 93:3-4, pages 347-357.
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L. J. Chen & I. W. Wu. (1981) Sheet resistivity and transmission electron microscope investigations of BF+2 -implanted silicon. Journal of Applied Physics 52:5, pages 3310-3318.
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L. J. Chen, Y. J. Wu, Y. C. Yang, K. P. Hsieh, M. S. Lin & R. S. Huang. (1981) Transmission electron microscope study of ion beam annealing effects of ion-implanted and evaporated amorphous silicon. Journal of Applied Physics 52:5, pages 3304-3309.
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L. J. Chen, Y. J. Wu & I. W. Wu. (1981) Factors influencing the formation and growth of faulted loops in BF+2 -implanted silicon. Journal of Applied Physics 52:5, pages 3520-3527.
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Eliezer Dovid Richmond, Alvin R. Knudson & Tom J. Magee. (2011) New Developments in the Defect Structure of Implanted Furnace-Annealed Silicon on Sapphire. MRS Proceedings 10.
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A. Mitić, T. Sato, H. Nishi & H. Hashimoto. (1980) Deep-level traps in low-dose boron-implanted and low-temperature annealed silicon. Applied Physics Letters 37:8, pages 727-729.
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D. K. Sadana, M. Strathman, J. Washburn, C. W. Magee, M. Mäenpää & G. R. Booker. (1980) Effect on electrical properties of segregation of implanted P+ at defect sites in Si. Applied Physics Letters 37:7, pages 615-618.
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