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Radiation Effects Volume 99, 1986 - Issue 1-4
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Original Articles

Formation mechanisms and structures of insulating compounds formed in silicon by ion beam synthesis

K. J. Reeson Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.; Radiation Effects in Insulators—3, University of Surrey, Guildford
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P. L. F. Hemment Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.; Radiation Effects in Insulators—3, University of Surrey, Guildford
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R. F. Peart Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, U.K.; Radiation Effects in Insulators—3, University of Surrey, Guildford
,
C. D. Meekison Department of Metallurgy and Science of Materials, University of Oxford; Radiation Effects in Insulators—3, University of Surrey, Guildford
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C. Marsh Department of Metallurgy and Science of Materials, University of Oxford; Radiation Effects in Insulators—3, University of Surrey, Guildford
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G. R. Booker Department of Metallurgy and Science of Materials, University of Oxford; Radiation Effects in Insulators—3, University of Surrey, Guildford
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R. J. Chater Department of Metallurgy and Materials Science, Imperial College; Radiation Effects in Insulators—3, University of Surrey, Guildford
,
J. A. Iulner Department of Metallurgy and Materials Science, Imperial College; Radiation Effects in Insulators—3, University of Surrey, Guildford
&
J. Davis B.T.R.L., Martlesham Heath; Radiation Effects in Insulators—3, University of Surrey, Guildford
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Pages 71-81 | Received 19 Jul 1985, Accepted 31 Oct 1985, Published online: 19 Aug 2006

Citations (6)

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Qi-Chu Zhang, P. McMillan & J.C. Kelly. (1990) Depth profile analysis of two element mixtures by rutherford backscattering spectrometry. Radiation Effects and Defects in Solids 114:1-2, pages 115-131.
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Articles from other publishers (5)

J. K. N. Lindner. 2004. Silicon Carbide. Silicon Carbide 251 277 .
Y. Kataoka & K. Wittmaack. (1999) Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions. Surface Science 424:2-3, pages 299-310.
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L. Almonacid, S. Schippel & A. Witzmann. (1992) Formation of silicon nitride layers by nitrogen implantation into Si/CoSi2 systems. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65:1-4, pages 84-87.
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N. Q. Khanh, M. Fried, G. Battistig, Z. Laczik, T. Lohner, E. Jaroli, V. Schiller & J. Guylai. (1988) Ellipsometric and ion backscattering measurements of the properties of silicon-on-insulator structure formed by thermally activated redistribution of high-dose ion implanted nitrogen. Physica Status Solidi (a) 108:1, pages K35-K40.
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E. Sobeslavsky, H. U. Jäger, U. Kreissig, W. Skorupa & K. Wollschläger. (1988) Nitrogen profile modification in high dose implantation synthesis of silicon nitride. Physica Status Solidi (a) 105:2, pages 387-396.
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