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Radiation Effects Volume 103, 1987 - Issue 1-4
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Original Articles

Universal relations between range and damage profile parameters

D. Fink Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-1000, Berlin 39, FR Germany
,
J. P. Biersack Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-1000, Berlin 39, FR Germany
,
P. F. Sanchez Facultad de cc. Físicas, Ciudad Universitaria, E-28040, Madrid, Spain
&
P. F. Fichtner Instituto de Física, Universidade Federal do Rio Grande do Sul, 90.000, Porto Alegre, RS, Brazil
Pages 89-101 | Received 01 Oct 1986, Published online: 19 Aug 2006

Citations (13)

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Read on this site (6)

A. Hammoudi & D. Fink. (1994) The influence of the surface on range profile parameters. Radiation Effects and Defects in Solids 132:3, pages 203-210.
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D. Fink, L. Wang, J.P. Biersack & F. Jahnel. (1990) 30 keV to 2 MeV Boron implantation profiles in solids. Radiation Effects and Defects in Solids 115:1-3, pages 93-112.
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D. Fink, K. Tjan & L. Wang. (1990) On the thermal mobility of lithium in metals and semiconductors. Radiation Effects and Defects in Solids 114:1-2, pages 21-50.
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D. Fink, J.P. Biersack, H.P. Schoelch, M. Weiser, S. Kalbitzer, M. Behar, J.P. De Souza, F.C. Zawislak, A.M. Mazzone & H. Kranz. (1989) 5 keV to 2 MeV lithium implantation and diffusion in amorphous silicon. Radiation Effects and Defects in Solids 108:2-4, pages 185-203.
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D. Fink, Tjan Kie, J.P. Biersack, Wang Lihong & Ma Yunru. (1989) Lithium implantation profiles in metals and semiconductors. Radiation Effects and Defects in Solids 108:1, pages 27-44.
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D. Fink. (1988) Helium implantation and thermal annealing behaviour. Radiation Effects 106:4, pages 231-264.
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Articles from other publishers (7)

J.H. Liang. (1999) Higher moments of the implanted-ion profiles of bismuth in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 153:1-4, pages 436-441.
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J.H. Liang. (1997) Range parameters of bismuth ions in polystyrene. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 132:1, pages 29-35.
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L. Wang, K. Tjan, D. Fink, P. Goppelt, M. Briére & J.P. Biersack. (1992) 20 keV—40 MeV lithium implantation profiles in aluminium. Surface and Coatings Technology 51:1-3, pages 372-378.
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D. Fink & M. Müller. (1992) On the three-dimensional shapes of ion implantation distributions. Surface and Coatings Technology 51:1-3, pages 352-357.
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V. Hnatowicz, V. Havránek & J. Kvítek. (1991) Statistical and systematical errors in RBS depth profiling of implanted atoms. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 53:3, pages 337-341.
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Wolfgang EcksteinWolfgang Eckstein. 1991. Computer Simulation of Ion-Solid Interactions. Computer Simulation of Ion-Solid Interactions 121 141 .
J.P. Eymery & A. Fnidiki. (1988) Formules analytiques pour le calcul du profil d'ions implantés. Revue de Physique Appliquée 23:5, pages 925-932.
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