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Radiation Effects Volume 102, 1987 - Issue 1-4
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Original Articles

The influence of dose rate and implantation temperature on the damage produced by N+ ion irradiation of silicon

S. A. R. Al-Hashmi Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4WT, UK
&
G. Carter Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4WT, UK
Pages 83-93 | Received 04 May 1986, Published online: 19 Aug 2006

Citations (12)

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Read on this site (3)

C. Benazeth, P. Hecquet, C. Mayoral & N. Benazeth. (1989) Temperature dependence of ion-induced auger electron emission from (111) silicon: I. Experiments. Radiation Effects and Defects in Solids 108:2-4, pages 227-239.
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Sukirno & G. Carter. (1989) The influence of incidence angle on disorder production in Cl and Ar ion implanted Si. Radiation Effects and Defects in Solids 108:2-4, pages 211-225.
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Sukirno & G. Carter. (1989) The effect of incidence angle on disorder production in ion implanted Si. Radiation Effects and Defects in Solids 108:2-4, pages 163-183.
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Articles from other publishers (9)

S Charnvanichborikarn, M T Myers, L Shao & S O Kucheyev. (2013) Pulsed ion beam measurement of defect diffusion lengths in irradiated solids. Journal of Physics: Condensed Matter 25:16, pages 162203.
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M. T. Myers, S. Charnvanichborikarn, L. Shao & S. O. Kucheyev. (2012) Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si. Physical Review Letters 109:9.
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G. Hobler & G. Otto. (2003) Status and open problems in modeling of as-implanted damage in silicon. Materials Science in Semiconductor Processing 6:1-3, pages 1-14.
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M. Chun, B. Kim, J. R. Conrad, R. J. Matyi, S. M. Malik, P. Fetherston & S. Han. (1999) High dose rate effects in silicon by plasma source ion implantation. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17:2, pages 863-866.
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A P Knights, A Nejim, N P Barradas, R Gwilliam, P G Coleman, F Malik, H Kherandish & S Romani. (2011) Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling. MRS Proceedings 532.
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A.I. Titov & G. Carter. (1996) Defect accumulation during room temperature N+ irradiation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 119:4, pages 491-500.
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G. Carter. (1996) The effects of flux, fluence and temperature on amorphization in ion implanted semiconductors. Journal of Applied Physics 79:11, pages 8285-8289.
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M. Hou, C. Benazeth, P. Hecquet & N. Benazeth. (1990) Argon-induced Auger emission from amorphous and crystalline silicon: A comparison between experiment and simulation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 48:1-4, pages 625-629.
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A. Claverie, A. Roumili, N. Gessinn & J. Beauvillain. (2011) On the Amorphization of Silicon by Light Ion Implantation: Ion Flux and Substrate Temperature Effects. MRS Proceedings 201.
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