The effect of incidence angle on disorder production in ion implanted Si

Abstract

Ne, Ar, Sb, and Xe ions have been implanted, at 30 keV or 80 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation-induced Si disorder was measured using RBS-channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10¹²-10¹⁶ ions·cm⁻².

The results show that, at low fluences the lighter (Ne) and slightly heavier (Ar) ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions.

Key Words:

• ion implantation
• RBS
• channeling
• depth profiles
• radiation damage
• angular dependence
• silicon