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Philosophical Magazine A Volume 60, 1989 - Issue 2
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Original Articles

Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C

Bruno C. De Cooman Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York, 14853, U.S.A.
&
C. Barry Carter Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York, 14853, U.S.A.
Pages 245-266 | Received 05 Jul 1988, Accepted 20 Oct 1988, Published online: 20 Aug 2006

Citations (12)

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Read on this site (4)

W.-J. Moon, T. Umeda & H. Saka. (2003) Temperature dependence of the stacking-fault energy in GaAs. Philosophical Magazine Letters 83:4, pages 233-247.
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Minya Ma & Tomoya Ogawa. (1996) Observation of the morphology and displacement of dislocations in vapour phase grown ZnSe crystals. Philosophical Magazine A 74:2, pages 477-493.
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M. Luysberg, D. Gerthsen & K. Urban. (1992) High-resolution electron microscopy of dislocation dipoles in plastically deformed InP. Philosophical Magazine Letters 65:3, pages 121-127.
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JaneG. Zhu & C. Barry Carter. (1990) 60° dislocations in (001) GaAs/Si interfaces. Philosophical Magazine A 62:3, pages 319-328.
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Articles from other publishers (8)

M. J. Matragrano, D. G. Ast, J. R. Shealy & V. Krishnamoorthy. (1996) Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension. Journal of Applied Physics 79:11, pages 8371-8378.
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G. Patrick Watson, Dieter G. Ast, Timothy J. Anderson & Balu Pathangey. (1993) The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates. Journal of Applied Physics 74:5, pages 3103-3110.
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I. Yonenaga & K. Sumino. (1993) Behaviour of dislocations in GaAs revealed by etch pit technique and X-ray topography. Journal of Crystal Growth 126:1, pages 19-29.
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G. Patrick Watson, Dieter G. Ast, Timothy J. Anderson, Balu Pathangey & Yasuhiro Hayakawa. (1992) The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates. Journal of Applied Physics 71:7, pages 3399-3407.
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P. Feltham & R. Banerjee. (1992) Theory and application of microindentation in studies of glide and cracking in single crystals of elemental and compound semiconductors. Journal of Materials Science 27:6, pages 1626-1632.
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Bradley A. Fox & William A. Jesser. (1990) Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structure. Journal of Applied Physics 68:6, pages 2739-2746.
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G. P. Watson, M. O. Thompson, D. G. Ast, A. Fischer-Colbrie & J. Miller. (1990) The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs. Journal of Electronic Materials 19:9, pages 957-965.
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G.P. Watson, D.G. Ast, T.J. Anderson & Y. Hayakawa. 1990. F. Weinberg International Symposium on Solidification Processing. F. Weinberg International Symposium on Solidification Processing 382 392 .

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