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Original Articles

On the structure of faulted interfaces in aluminium nitride ceramics

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Pages 241-258 | Received 09 Jan 1990, Accepted 16 Feb 1990, Published online: 20 Aug 2006

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Yanfa Yan, Masami Terauchi & Michiyoshi Tanaka. (1997) The structures of inversion domain boundaries in AlN ceramics. Philosophical Magazine A 75:4, pages 1005-1022.
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S. Abaidia, V. Serin, G. Zanchi, Y. Kihn & J. Sévely. (1995) An EELS investigation of oxygen localization in the AlN structure. Philosophical Magazine A 72:6, pages 1657-1670.
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Articles from other publishers (12)

Gon Namkoong, W. Alan Doolittle, April S. Brown, Maria Losurdo, Maria M. Giangregorio & Giovanni Bruno. (2003) The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films. Journal of Crystal Growth 252:1-3, pages 159-166.
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Yue Jun Sun, Oliver Brandt, Uwe Jahn, Tian Yu Liu, Achim Trampert, Sven Cronenberg, Subhabrata Dhar & Klaus H. Ploog. (2002) Impact of nucleation conditions on the structural and optical properties of M -plane GaN(11̄00) grown on γ-LiAlO2 . Journal of Applied Physics 92:10, pages 5714-5719.
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Gon Namkoong, W. Alan Doolittle, April S. Brown, Maria Losurdo, Pio Capezzuto & Giovanni Bruno. (2002) Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics. Journal of Applied Physics 91:4, pages 2499-2507.
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K. Dovidenko, S. Oktyabrsky & J. Narayan. (1997) Characteristics of stacking faults in AlN thin films. Journal of Applied Physics 82:9, pages 4296-4299.
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P. Ruterana, V. Potin & G. Nouet. (2011) The core Structure Of Pure Edge Threading Dislocations In Gan Layers Grown On [0001] SiC Or Sapphire By Mbe. MRS Proceedings 482.
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X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars & J. S. Speck. (1996) Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3. Journal of Applied Physics 80:6, pages 3228-3237.
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Alistair D. Westwood, Robert A. Youngman, Martha R. McCartney, Alastair N. Cormack & Michael R. Notis. (2011) Oxygen incorporation in aluminum nitride via extended defects: Part II. Structure of curved inversion domain boundaries and defect formation. Journal of Materials Research 10:5, pages 1287-1300.
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Alistair D. Westwood, Robert A. Youngman, Martha R. McCartney, Alastair N. Cormack & Michael R. Notis. (2011) Oxygen incorporation in aluminum nitride via extended defects: Part I. Refinement of the structural model for the planar inversion domain boundary. Journal of Materials Research 10:5, pages 1270-1286.
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J. P. Michel, I. Masson, S. Choux & A. George. (1994) Inversion domain boundaries and dislocations observed by TEM in deformed aluminium nitride. Physica Status Solidi (a) 146:1, pages 97-108.
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Darko Makovec & Marija Trontelj. (2005) Extended Defects in ZnO Ceramics Containing Bi 4 Ti 3 O 12 Additive . Journal of the American Ceramic Society 77:5, pages 1202-1208.
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J. Bruley, A.D. Westwood, R. A. Youngman, J.-C. Zhao & M.R. Notis. (2011) Sreels Analysis of Oxygen-Rich Inversion Domain Boundaries in Aluminum Nitride. MRS Proceedings 357.
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D. Dorignac, A. Mazel, Y. Kihn, J. Sévely, B. Aspar, B. Armas & C. Combescure. (1994) Transmission electron microscopy studies of AlN deposits. Journal of the European Ceramic Society 13:4, pages 345-353.
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