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Philosophical Magazine A Volume 63, 1991 - Issue 3
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Original Articles

Interactions of misfit dislocations in InxGa1-xAs/GaAs interfaces

A. Lefebvre Laboratoire de Structure et Propriétés de l'État Solide, Université des Sciences et Techniques de Lille Flandres-Artois, B[acaron]timent, C6-59655, Villeneuve d'Ascq Cedex, France
,
C. Herbeaux Laboratoire de Structure et Propriétés de l'État Solide, Université des Sciences et Techniques de Lille Flandres-Artois, B[acaron]timent, C6-59655, Villeneuve d'Ascq Cedex, France
&
J. Di Persio Laboratoire de Structure et Propriétés de l'État Solide, Université des Sciences et Techniques de Lille Flandres-Artois, B[acaron]timent, C6-59655, Villeneuve d'Ascq Cedex, France
Pages 471-485 | Received 21 Nov 1989, Accepted 14 Feb 1990, Published online: 13 Sep 2006

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R. Beanland, D.J. Dunstan & P.J. Goodhew. (1996) Plastic relaxation and relaxed buffer layers for semiconductor epitaxy. Advances in Physics 45:2, pages 87-146.
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A. Lefebvre & C. Ulhaq-bouillet. (1994) Multiplication of misfit dislocations in InxGa1−xAs/GaAs heterostructures. Philosophical Magazine A 70:6, pages 999-1012.
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C. Ulhaq-bouillet, A. Lefebvre & J. Di Persio. (1994) Cross-slip in the first stages of plastic relaxation in InxGa1−xAs/GaAs heterostructures. Philosophical Magazine A 69:5, pages 995-1015.
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C. Ulhaq-Bouillet & A. Lefebvre. (1993) On the formation of edge dislocations in InxGa1−xAs/GaAs heterostructures with x < 0·20. Philosophical Magazine A 68:6, pages 1273-1294.
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Robert Hull & JohnC. Bean. (1992) Misfit dislocations in lattice-mismatched epitaxial films. Critical Reviews in Solid State and Materials Sciences 17:6, pages 507-546.
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M. Gutiérrez, M. Herrera, D. González, G. Aragón, J.J. Sánchez, I. Izpura, M. Hopkinson & R. Garcı́a. (2002) Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0–1.1μm operation. Microelectronics Journal 33:7, pages 553-557.
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L. Sagalowicz, A. Rudra, E. Kapon, M. Hammar, F. Salomonsson, A. Black, P.-H. Jouneau & T. Wipijewski. (2000) Defects, structure, and chemistry of InP–GaAs interfaces obtained by wafer bonding. Journal of Applied Physics 87:9, pages 4135-4146.
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V. I. Vdovin. (1999) Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication. physica status solidi (a) 171:1, pages 239-250.
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Joon-Hyung Kim, Tae-Yeon Seong, N. J. Mason & P. J. Walker. (1998) Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials 27:5, pages 466-471.
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L Bouzidi, V Pierron-Bohnes, O Haemmerlé, C Bouillet-Ulhaq & M.C Cadeville. (1998) Long-range chemical order and induced lattice deformation along the growth direction in epitaxial [0001] Co1−xRux alloys. Thin Solid Films 318:1-2, pages 215-218.
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O. Ersen, L. Bouzidi, V. Pierron-Bohnes & M.C. Cadeville. (2011) Chemical Ordering Along the Growth Direction in Epitaxial [0002] Co 1−x Ru x Alloy Thin Films . MRS Proceedings 528.
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V. Pierron-Bohnes, M. Maret, L. Bouzidi & M.C. Cadeville. (2011) Respective Roles of Surface, Grain Boundary and Volume Diffusions in Driving Structural, Microstructural and Magnetic Properties of MBE Alloy Thin Films. MRS Proceedings 527.
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A.Y Du, M.F Li, T.C Chong, S.J Xu, Z Zhang & D.P Yu. (1997) Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures. Thin Solid Films 311:1-2, pages 7-14.
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S. Christiansen, M. Albrecht, J. Michler & H. P. Strunk. (1996) Elastic and plastic relaxation in slightly undulated misfitting epitaxial layers - A quantitative approach by three-dimensional finite element calculations. Physica Status Solidi (a) 156:1, pages 129-150.
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M. Hohnisch, H.-J. Herzog & F. Schäffler. 1996. Selected Topics in Group IV and II–VI Semiconductors. Selected Topics in Group IV and II–VI Semiconductors 126 131 .
M. Hohnisch, H.-J. Herzog & F. Schäffler. (1995) Relaxation of compositionally graded Si1 − xGex buffers: a TEM study. Journal of Crystal Growth 157:1-4, pages 126-131.
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K. Shintani & H. Yonezawa. (1995) Comparative study of critical thicknesses of strained epitaxial layers based on the zero-energy criterion of dislocation half-loops. Journal of Applied Physics 78:8, pages 5022-5027.
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M. Albrecht, S. Christiansen & H. P. Strunk. (1995) The driving force for dislocation multiplication in the substrate of misfitting heteroepitaxial systems. Physica Status Solidi (a) 150:1, pages 453-461.
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J.M. Kang, M. Nouaoura, L. Lassabatère & A. Rocher. (1994) Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001). Journal of Crystal Growth 143:3-4, pages 115-123.
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D. Gerthsen, D. Meertens, H. Heinke, A. Waag, T. Litz & G. Landwehr. (1994) Structural properties of CdMgTe/CdTe superlattices. Journal of Applied Physics 75:11, pages 7323-7329.
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J. C. P. Chang, T. P. Chin, C. W. Tu & K. L. Kavanagh. (1993) Multiple dislocation loops in linearly graded In x Ga1− x As (0≤ x ≤0.53) on GaAs and In x Ga1− x P (0≤ x ≤0.32) on GaP . Applied Physics Letters 63:4, pages 500-502.
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M. Tamura, A. Hashimoto & Y. Nakatsugawa. (1992) Threading dislocations in In x Ga1− x As/GaAs heterostructures . Journal of Applied Physics 72:8, pages 3398-3405.
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J.P Hirth. (1992) On the erergy and configuration of orthogonal misfit dislocations. Scripta Metallurgica et Materialia 27:6, pages 681-686.
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Xiaoxin Feng & J. P. Hirth. (1992) Critical layer thicknesses for inclined dislocation stability in multilayer structures. Journal of Applied Physics 72:4, pages 1386-1394.
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F. K. LeGoues, J. A. Ott, K. Eberl & S. S. Iyer. (1992) In   situ study of relaxation of SiGe thin films by the modified Frank–Read mechanism . Applied Physics Letters 61:2, pages 174-176.
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F. K. LeGoues, K. Eberl & S. S. Iyer. (1992) Relaxation by the modified Frank–Read mechanism in compositionally uniform thin films. Applied Physics Letters 60:23, pages 2862-2864.
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F. K. LeGoues, B. S. Meyerson, J. F. Morar & P. D. Kirchner. (1992) Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices. Journal of Applied Physics 71:9, pages 4230-4243.
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