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Original Articles

The study of misfit dislocations in InxGa1-xAs/GaAs strained quantum well structures

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Pages 829-839 | Received 05 Apr 1991, Accepted 21 Jul 1991, Published online: 20 Aug 2006

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W. Spirkl, B.K. Tanner, C. Whitehouse, S.J. Barnett, A.G. Cullis, A.D. Johnson, A. Keir, B. Usher, G.F. Clark, W. Hagston, C.R. Hogg & B. Lunn. (1994) Dislocation contrast in X-ray reflection topography of strained heterostructures. Philosophical Magazine A 70:3, pages 531-548.
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Articles from other publishers (16)

Yurun Sun, Kuilong Li, Jianrong Dong, Xulu Zeng, Shuzhen Yu, Yongming Zhao, Chunyu Zhao & Hui Yang. (2014) The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (111)A. Journal of Alloys and Compounds 597, pages 45-49.
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Yutaka Ohno & Seiji Takeda. 2012. In‐Situ Electron Microscopy. In‐Situ Electron Microscopy 303 319 .
E Spiecker, J Schöne, S Rajagopalan & W Jäger. 2005. Microscopy of Semiconducting Materials. Microscopy of Semiconducting Materials 117 130 .
E Spiecker & W J ger. (2002) Burgers vector analysis of large area misfit dislocation arrays from bend contour contrast in transmission electron microscope images. Journal of Physics: Condensed Matter 14:48, pages 12767-12776.
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J. Katcki, J. Ratajczak, J. Adamczewska, F. Phillipp, N. Y. Jin-Phillipp, K. Regiński & M. Bugajski. (1999) Formation of Dislocations in InGaAs/GaAs Heterostructures. physica status solidi (a) 171:1, pages 275-282.
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Y. Tang, D. H. Rich, A. M. Moy & K. Y. Cheng. (1997) Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 15:4, pages 1034-1039.
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P. R. Griffin, J. Barnes, K. W. J. Barnham, G. Haarpaintner, M. Mazzer, C. Zanotti-Fregonara, E. Grünbaum, C. Olson, C. Rohr, J. P. R. David, J. S. Roberts, R. Grey & M. A. Pate. (1996) Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p – i – n diodes . Journal of Applied Physics 80:10, pages 5815-5820.
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X.J. Ning & P. Pirouz. (1996) Formation of misfit dislocations with in-plane Burgers vectors in boron diffused (111) silicon. Acta Materialia 44:5, pages 2127-2143.
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X. J. Ning & P. Pirouz. (2011) A large angle convergent beam electron diffraction study of the core nature of dislocations in 3 C -SiC . Journal of Materials Research 11:4, pages 884-894.
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X. J. Ning, F. R. Chien, P. Pirouz, J. W. Yang & M. Asif Khan. (2011) Growth defects in GaN films on sapphire: The probable origin of threading dislocations. Journal of Materials Research 11:3, pages 580-592.
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Yusuf Atici. (1995) Observation of defects and tetragonal distortions in heterostructures by TEM. Journal of Crystal Growth 156:3, pages 147-154.
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U. Jahn, J. Menniger, S. H. Kwok, E. Runge, K. Fujiwara, R. Hey & H. T. Grahn. (1995) Cathodoluminescence microscopy of inhomogeneities in semiconductor heterostructures. Physica Status Solidi (a) 150:1, pages 439-452.
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A. Höpner, H. Seitz, I. Rechenberg, F. Bugge, M. Procop, K. Scheerschmidt & H. J. Queisser. (1995) TEM characterization of the interface quality of MOVPE grown strained InGaAs/GaAs heterostructures. Physica Status Solidi (a) 150:1, pages 427-437.
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J. Wang, J. W. Steeds & D. I. Westwood. (1993) Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures. Physica Status Solidi (a) 138:2, pages 431-435.
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J Sang, J W Steeds & M Hopkinson. (1993) Microstructure and cathodoluminescence of MBE-grown (001) In x Ga 1-x P/GaAs strained-layer heterostructures . Semiconductor Science and Technology 8:4, pages 502-508.
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X. J. Ning & P. Pirouz. (2011) Transition From Inclined to In-Plane 60° Misfit Dislocations in a Diffuse Interface. MRS Proceedings 319.
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