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Philosophical Magazine A Volume 69, 1994 - Issue 5
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Original Articles

A TEM in situ investigation of dislocation mobility in the II–VI semiconductor compound ZnS A quantitative study of the cathodoplastic effect

C. Levade Laboratoire de Physique des Solides, associé au CNRS (UA 74) INSA Complexe Scientifique de Rangueil, 31077, Toulouse Cedex, France
,
A. Faress Laboratoire de Physique des Solides, associé au CNRS (UA 74) INSA Complexe Scientifique de Rangueil, 31077, Toulouse Cedex, France
&
G. Vanderschaeve Laboratoire de Physique des Solides, associé au CNRS (UA 74) INSA Complexe Scientifique de Rangueil, 31077, Toulouse Cedex, France
Pages 855-870 | Received 20 Sep 1993, Accepted 27 Oct 1993, Published online: 27 Sep 2006

Citations (27)

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S. Lavagne , C. Levade & G. Vanderschaeve. (2006) Transmission electron microscopy investigation of dislocation behaviour in semiconductors and the influence of electronic excitation. Philosophical Magazine 86:29-31, pages 4923-4940.
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K. Edagawa, H. Koizumi, Y. Kamimura & T. Suzuki. (2000) Temperature dependence of the flow stress of III–V compounds. Philosophical Magazine A 80:11, pages 2591-2608.
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T. Suzki, T. Yasutomi, T. Tokuoka & I. Yonenaga. (1999) Plastic deformation of GaAs at low temperatures. Philosophical Magazine A 79:11, pages 2637-2654.
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Minya Ma & Tomoya Ogawa. (1996) Observation of the morphology and displacement of dislocations in vapour phase grown ZnSe crystals. Philosophical Magazine A 74:2, pages 477-493.
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P.D. Brown, Y.Y. Loginov, W.M. Stobbs & C.J. Humphreys. (1995) Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. Philosophical Magazine A 72:1, pages 39-57.
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Articles from other publishers (22)

Maria V. Mukhina, Jason Tresback, Justin C. Ondry, Austin Akey, A. Paul Alivisatos & Nancy Kleckner. (2021) Single-Particle Studies Reveal a Nanoscale Mechanism for Elastic, Bright, and Repeatable ZnS:Mn Mechanoluminescence in a Low-Pressure Regime. ACS Nano 15:3, pages 4115-4133.
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T. Kujofsa & J. E. Ayers. (2020) Inclusion of Dislocation Pinning Interactions in a Model for Plastic Flow in II–VI Semiconductors. Journal of Electronic Materials 49:11, pages 6990-6995.
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Frances M. Ross & Andrew M. Minor. 2019. Springer Handbook of Microscopy. Springer Handbook of Microscopy 101 187 .
Koji Maeda. 2013. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices 263 281 .
Koji Maeda. (2011) Recombination-enhanced Dislocation Glides—The Current Status of Knowledge. MRS Proceedings 1195.
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Koji Maeda. (2011) Recombination-enhanced Dislocation Glides—The Current Status of Knowledge. MRS Proceedings 1195.
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I. Yonenaga, H. Koizumi, Y. Ohno & T. Taishi. (2008) High-temperature strength and dislocation mobility in the wide band-gap ZnO: Comparison with various semiconductors. Journal of Applied Physics 103:9.
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D. B. Holt & B. G. Yacobi. 2009. Extended Defects in Semiconductors. Extended Defects in Semiconductors 412 605 .
A. Galeckas, J. Linnros & P. Pirouz. (2006) Recombination-Induced Stacking Faults: Evidence for a General Mechanism in Hexagonal SiC. Physical Review Letters 96:2.
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Ichiro Yonenaga. (2005) Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors. MATERIALS TRANSACTIONS 46:9, pages 1979-1985.
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M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker & S. Wang. (2004) Partial dislocations and stacking faults in 4H-SiC PiN diodes. Journal of Electronic Materials 33:5, pages 472-476.
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Hans Siethoff. (2003) Correspondence of the plasticity of rocksalt structure ceramics and tetrahedrally coordinated semiconductors. Journal of Applied Physics 94:5, pages 3128-3134.
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M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker & S. Wang. (2003) Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes. Applied Physics Letters 82:15, pages 2410-2412.
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M. Benyoucef, A. Coujou, F. Pettinari-Sturmel, S. Raujol, B. Boubker & N. Clément. (2003) Dynamics of micromechanisms controlling the mechanical behaviour of industrial single crystal superalloys. Sadhana 28:1-2, pages 129-146.
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. 2003. Thermally Activated Mechanisms in Crystal Plasticity. Thermally Activated Mechanisms in Crystal Plasticity 227 277 .
M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker & S. Wang. (2011) Extended Defects in 4H-SiC PiN Diodes. MRS Proceedings 742.
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G. Vanderschaeve, C. Levade & D. Caillard. (2001) Dislocation mobility and electronic effects in semiconductor compounds. Journal of Microscopy 203:1, pages 72-83.
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G Vanderschaeve, C Levade & D Caillard. (2000) Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors . Journal of Physics: Condensed Matter 12:49, pages 10093-10103.
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Colette Levade & Guy Vanderschaeve. (1999) Electron-irradiation enhanced dislocation glide in II–VI semiconductors. Journal of Crystal Growth 197:3, pages 565-570.
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I. Yonenaga. (1998) Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductors. Journal of Applied Physics 84:8, pages 4209-4213.
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S. Koubaiti, J.J. Couderc, C. Levade & G. Vanderschaeve. (1997) Photoplastic effect and Vickers microhardness in III–V and II–VI semiconductor compounds. Materials Science and Engineering: A 234-236, pages 865-868.
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K. Maeda & S. Takeuchi. 1996. L12 Ordered Alloys. L12 Ordered Alloys 443 504 .

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