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Original Articles

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

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Pages 1013-1025 | Received 25 Feb 1997, Accepted 03 Aug 1997, Published online: 12 Aug 2009

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Engin Arslan, Mustafa K. Öztürk, Süleyman Özçelik & Ekmel Özbay. (2019) Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate. Philosophical Magazine 99:14, pages 1715-1731.
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